Authors: SALLAGOITY P GAILLARD F RIVOIRE M PAOLI M HAOND M MCCLATHIE S

Citation: P. Sallagoity et al., STI PROCESS STEPS FOR SUB-QUARTER MICRON CMOS, Microelectronics and reliability, 38(2), 1998, pp. 271-276

Authors: SALLAGOITY P ADAHANIFI M PAOLI M HAOND M

Citation: P. Sallagoity et al., ANALYSIS OF WIDTH EDGE EFFECTS IN ADVANCED ISOLATION SCHEMES FOR DEEP-SUBMICRON CMOS TECHNOLOGIES, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1900-1906