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Results: 1-3 |
Results: 3
NEW DEVELOPMENTS IN-BEAM INDUCED CURRENT METHODS FOR THE FAILURE ANALYSIS OF VLSI CIRCUITS
Authors: CHAN DSH PHANG JCH LAU WS ONG VKS SANE V KOLACHINA S OSIPOWICZ T WATT F
Citation: Dsh. Chan et al., NEW DEVELOPMENTS IN-BEAM INDUCED CURRENT METHODS FOR THE FAILURE ANALYSIS OF VLSI CIRCUITS, Microelectronic engineering, 31(1-4), 1996, pp. 57-67
QUANTITATIVE IMAGING OF LOCAL DEFECTS IN VERY THIN SILICON DIOXIDE FILMS AT LOW-BIAS VOLTAGE BY TRUE OXIDE ELECTRON-BEAM-INDUCED CURRENT
Authors: LAU WS CHAN DSH PHANG JCH CHOW KW PEY KS LIM YP SANE V CRONQUIST B
Citation: Ws. Lau et al., QUANTITATIVE IMAGING OF LOCAL DEFECTS IN VERY THIN SILICON DIOXIDE FILMS AT LOW-BIAS VOLTAGE BY TRUE OXIDE ELECTRON-BEAM-INDUCED CURRENT, Journal of applied physics, 77(2), 1995, pp. 739-746
2 TYPES OF LOCAL OXIDE SUBSTRATE DEFECTS IN VERY THIN SILICON DIOXIDEFILMS ON SILICON/
Authors: LAU WS SANE V PEY KS CRONQUIST B
Citation: Ws. Lau et al., 2 TYPES OF LOCAL OXIDE SUBSTRATE DEFECTS IN VERY THIN SILICON DIOXIDEFILMS ON SILICON/, Applied physics letters, 67(19), 1995, pp. 2854-2856
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