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Results: 1-11 |
Results: 11
PLASMA-ETCHING OF INGAP, ALINP AND ALGAP IN BCL3 ENVIRONMENTS
Authors: HONG J LEE JW SANTANA CJ ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: J. Hong et al., PLASMA-ETCHING OF INGAP, ALINP AND ALGAP IN BCL3 ENVIRONMENTS, Materials science & engineering. B, Solid-state materials for advanced technology, 41(2), 1996, pp. 247-252
DRY-ETCHING OF INGAALP ALLOYS IN CL-2 AR HIGH ION DENSITY PLASMAS/
Authors: HONG J LEE JW LAMBERS ES ABERNATHY CR SANTANA CJ PEARTON SJ HOBSON WS REN F
Citation: J. Hong et al., DRY-ETCHING OF INGAALP ALLOYS IN CL-2 AR HIGH ION DENSITY PLASMAS/, Journal of electronic materials, 25(9), 1996, pp. 1428-1433
DRY-ETCHING OF INGAP AND ALINP IN CH4 H-2 AR
Authors: LEE JW PEARTON SJ SANTANA CJ LAMBERS ES ABERNATHY CR HOBSON WS REN F
Citation: Jw. Lee et al., DRY-ETCHING OF INGAP AND ALINP IN CH4 H-2 AR, Plasma chemistry and plasma processing, 16(3), 1996, pp. 365-378
COMPARISON OF BCL3 AR AND BCL3/N-2 PLASMA CHEMISTRIES FOR DRY-ETCHINGOF INGAALP ALLOYS/
Authors: HONG J LEE JW SANTANA CJ ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: J. Hong et al., COMPARISON OF BCL3 AR AND BCL3/N-2 PLASMA CHEMISTRIES FOR DRY-ETCHINGOF INGAALP ALLOYS/, Semiconductor science and technology, 11(8), 1996, pp. 1218-1224
COMPARISON OF DRY-ETCHING TECHNIQUES FOR INGAP, ALINP AND ALGAP
Authors: HONG J LEE JW SANTANA CJ ABERNATHY CR LAMBERS ES PEARTON SJ HOBSON WS REN F
Citation: J. Hong et al., COMPARISON OF DRY-ETCHING TECHNIQUES FOR INGAP, ALINP AND ALGAP, Solid-state electronics, 39(7), 1996, pp. 1109-1112
PLASMA-INDUCED DAMAGE AND HYDROGENATION OF ALXGA1-XP
Authors: LEE JW SANTANA CJ ABERNATHY CR PEARTON SJ JONES KS
Citation: Jw. Lee et al., PLASMA-INDUCED DAMAGE AND HYDROGENATION OF ALXGA1-XP, Solid-state electronics, 39(1), 1996, pp. 1-5
THE EFFECTS OF PROCESSING CONDITIONS ON THE DENSITY AND MICROSTRUCTURE OF HOT-PRESSED SILICON POWDER
Authors: SANTANA CJ JONES KS
Citation: Cj. Santana et Ks. Jones, THE EFFECTS OF PROCESSING CONDITIONS ON THE DENSITY AND MICROSTRUCTURE OF HOT-PRESSED SILICON POWDER, Journal of Materials Science, 31(18), 1996, pp. 4985-4990
INITIAL GROWTH-STAGES OF ALXGA1-XP ON EPITAXIAL SILICON
Authors: SANTANA CJ ABERNATHY CR PEARTON SJ JONES KS
Citation: Cj. Santana et al., INITIAL GROWTH-STAGES OF ALXGA1-XP ON EPITAXIAL SILICON, Journal of crystal growth, 164(1-4), 1996, pp. 248-255
HIGH ION DENSITY PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CH4 H-2/AR/
Authors: LEE JW PEARTON SJ SANTANA CJ MILEHAM JR LAMBERS ES ABERNATHY CR REN F HOBSON WS
Citation: Jw. Lee et al., HIGH ION DENSITY PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CH4 H-2/AR/, Journal of the Electrochemical Society, 143(3), 1996, pp. 1093-1098
WET CHEMICAL ETCH SOLUTIONS FOR ALXGA1-XP
Authors: LEE JW SANTANA CJ ABERNATHY CR PEARTON SJ REN F
Citation: Jw. Lee et al., WET CHEMICAL ETCH SOLUTIONS FOR ALXGA1-XP, Journal of the Electrochemical Society, 143(1), 1996, pp. 1-3
DISLOCATIONS IN LATTICE-MISMATCHED WIDE-GAP II-VI GAAS HETEROSTRUCTURES AS LASER-LIGHT SCATTERERS - EXPERIMENT AND THEORY/
Authors: ROULEAU CM SANTANA CJ JONES KS PARK RM
Citation: Cm. Rouleau et al., DISLOCATIONS IN LATTICE-MISMATCHED WIDE-GAP II-VI GAAS HETEROSTRUCTURES AS LASER-LIGHT SCATTERERS - EXPERIMENT AND THEORY/, Journal of applied physics, 78(2), 1995, pp. 1203-1209
Risultati: 1-11 |