AAAAAA

   
Results: 1-25 | 26-35 |
Results: 26-35/35
ADAPTABLE IC MANUFACTURING SYSTEMS FOR THE 21ST-CENTURY
Authors: SARASWAT KC
Citation: Kc. Saraswat, ADAPTABLE IC MANUFACTURING SYSTEMS FOR THE 21ST-CENTURY, Microelectronic engineering, 25(2-4), 1994, pp. 131-137
TEMPERATURE-MEASUREMENT IN RAPID THERMAL-PROCESSING USING ACOUSTIC TECHNIQUES
Authors: LEE YJ KHURIYAKUB BT SARASWAT KC
Citation: Yj. Lee et al., TEMPERATURE-MEASUREMENT IN RAPID THERMAL-PROCESSING USING ACOUSTIC TECHNIQUES, Review of scientific instruments, 65(4), 1994, pp. 974-976
POLYCRYSTALLINE SILICON-GERMANIUM THIN-FILM TRANSISTORS
Authors: KING TJ SARASWAT KC
Citation: Tj. King et Kc. Saraswat, POLYCRYSTALLINE SILICON-GERMANIUM THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1581-1591
CORRELATION OF TRAP GENERATION TO CHARGE-TO-BREAKDOWN (QBD) - A PHYSICAL-DAMAGE MODEL OF DIELECTRIC-BREAKDOWN
Authors: APTE PP SARASWAT KC
Citation: Pp. Apte et Kc. Saraswat, CORRELATION OF TRAP GENERATION TO CHARGE-TO-BREAKDOWN (QBD) - A PHYSICAL-DAMAGE MODEL OF DIELECTRIC-BREAKDOWN, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1595-1602
ELECTRICAL-PROPERTIES OF HEAVILY-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS
Authors: KING TJ MCVITTIE JP SARASWAT KC PFIESTER JR
Citation: Tj. King et al., ELECTRICAL-PROPERTIES OF HEAVILY-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 228-232
DEPOSITION AND PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON-GERMANIUM FILMS
Authors: KING TJ SARASWAT KC
Citation: Tj. King et Kc. Saraswat, DEPOSITION AND PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED POLYCRYSTALLINE SILICON-GERMANIUM FILMS, Journal of the Electrochemical Society, 141(8), 1994, pp. 2235-2241
MODELING, IDENTIFICATION, AND CONTROL OF RAPID THERMAL-PROCESSING SYSTEMS
Authors: SCHAPER CD MOSLEHI MM SARASWAT KC KAILATH T
Citation: Cd. Schaper et al., MODELING, IDENTIFICATION, AND CONTROL OF RAPID THERMAL-PROCESSING SYSTEMS, Journal of the Electrochemical Society, 141(11), 1994, pp. 3200-3209
IN-SITU ACOUSTIC TEMPERATURE TOMOGRAPHY OF SEMICONDUCTOR WAFERS
Authors: DEGERTEKIN FL PEI J KHURIYAKUB BT SARASWAT KC
Citation: Fl. Degertekin et al., IN-SITU ACOUSTIC TEMPERATURE TOMOGRAPHY OF SEMICONDUCTOR WAFERS, Applied physics letters, 64(11), 1994, pp. 1338-1340
SIO2 DEGRADATION WITH CHARGE INJECTION POLARITY
Authors: APTE PP SARASWAT KC
Citation: Pp. Apte et Kc. Saraswat, SIO2 DEGRADATION WITH CHARGE INJECTION POLARITY, IEEE electron device letters, 14(11), 1993, pp. 512-514
BACKSCATTERED DEPOSITION IN AR SPUTTER ETCH OF SILICON DIOXIDE
Authors: CHANG CY MCVITTIE JP SARASWAT KC LIN KK
Citation: Cy. Chang et al., BACKSCATTERED DEPOSITION IN AR SPUTTER ETCH OF SILICON DIOXIDE, Applied physics letters, 63(16), 1993, pp. 2294-2296
Risultati: 1-25 | 26-35 |