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Results: 1-13 |
Results: 13
THEORETICAL CALCULATIONS OF SENSITIVITY OF DEPROTECTION REACTIONS FORACRYLIC POLYMERS FOR 193 NM LITHOGRAPHY II - PROTECTION GROUPS CONTAINING AN ADAMANTYL UNIT
Authors: MATSUZAWA NN TAKECHI S OHFUJI T KUHARA K MORI S ENDO M KAMON K MORISAWA T YAMAGUCHI A SASAGO M
Citation: Nn. Matsuzawa et al., THEORETICAL CALCULATIONS OF SENSITIVITY OF DEPROTECTION REACTIONS FORACRYLIC POLYMERS FOR 193 NM LITHOGRAPHY II - PROTECTION GROUPS CONTAINING AN ADAMANTYL UNIT, JPN J A P 1, 37(10), 1998, pp. 5781-5785
THEORETICAL CALCULATIONS OF SENSITIVITY OF DEPROTECTION REACTIONS FORACRYLIC POLYMERS FOR 193 NM LITHOGRAPHY
Authors: MATSUZAWA NN OHFUJI T KUHARA K MORI S MORISAWA T ENDO M SASAGO M
Citation: Nn. Matsuzawa et al., THEORETICAL CALCULATIONS OF SENSITIVITY OF DEPROTECTION REACTIONS FORACRYLIC POLYMERS FOR 193 NM LITHOGRAPHY, Journal of materials chemistry, 8(4), 1998, pp. 853-858
FABRICATION OF 0.13-MU-M DEVICE PATTERNS BY ARGON FLUORIDE EXCIMER-LASER LITHOGRAPHY WITH PRACTICAL RESOLUTION ENHANCEMENT TECHNIQUES
Authors: OGAWA T UEMATSU M ONODERA T NAKAZAWA K TAKAHASHI M OHFUJI T OHTSUKA H SASAGO M
Citation: T. Ogawa et al., FABRICATION OF 0.13-MU-M DEVICE PATTERNS BY ARGON FLUORIDE EXCIMER-LASER LITHOGRAPHY WITH PRACTICAL RESOLUTION ENHANCEMENT TECHNIQUES, JPN J A P 1, 36(12B), 1997, pp. 7482-7487
FABRICATION OF 0.1 MU-M PATTERNS USING AN ALTERNATING PHASE-SHIFT MASK IN ARF EXCIMER-LASER LITHOGRAPHY
Authors: NAKAZAWA K UEMATSU M ONODERA T KAMON K OGAWA T MORI S TAKAHASHI M OHFUJI T OHTSUKA H SASAGO M
Citation: K. Nakazawa et al., FABRICATION OF 0.1 MU-M PATTERNS USING AN ALTERNATING PHASE-SHIFT MASK IN ARF EXCIMER-LASER LITHOGRAPHY, JPN J A P 1, 36(12B), 1997, pp. 7488-7493
PROSPECT AND CHALLENGES OF ARF EXCIMER-LASER LITHOGRAPHY PROCESSES AND MATERIALS
Authors: OHFUJI T OGAWA T KUHARA K SASAGO M
Citation: T. Ohfuji et al., PROSPECT AND CHALLENGES OF ARF EXCIMER-LASER LITHOGRAPHY PROCESSES AND MATERIALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4203-4206
NEW CHEMICALLY AMPLIFIED POSITIVE RESIST FOR ELECTRON-BEAM LITHOGRAPHY
Authors: HASHIMOTO K KATSUYAMA A ENDO M SASAGO M
Citation: K. Hashimoto et al., NEW CHEMICALLY AMPLIFIED POSITIVE RESIST FOR ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 37-43
NEW TECHNOLOGIES OF KRF EXCIMER-LASER LITHOGRAPHY SYSTEM IN 0.25 MICRON COMPLEX CIRCUIT PATTERNS
Authors: SASAGO M MATSUO T YAMASHITA K ENDO M MATSUOKA K KOIZUMI T KATSUYAMA A NOMURA N
Citation: M. Sasago et al., NEW TECHNOLOGIES OF KRF EXCIMER-LASER LITHOGRAPHY SYSTEM IN 0.25 MICRON COMPLEX CIRCUIT PATTERNS, IEICE transactions on electronics, E77C(3), 1994, pp. 416-424
NOVEL SILICON-CONTAINING NEGATIVE RESIST FOR BILAYER APPLICATION IN ELECTRON-BEAM DIRECT WRITING
Authors: HASHIMOTO K ENDO M SASAGO M
Citation: K. Hashimoto et al., NOVEL SILICON-CONTAINING NEGATIVE RESIST FOR BILAYER APPLICATION IN ELECTRON-BEAM DIRECT WRITING, JPN J A P 1, 32(7), 1993, pp. 3317-3320
A NEW ANALYTICAL TECHNIQUE FOR EVALUATING STANDING-WAVE EFFECT OF CHEMICALLY AMPLIFIED POSITIVE RESIST
Authors: MATSUOKA K YAMASHITA K SASAGO M NOMURA N
Citation: K. Matsuoka et al., A NEW ANALYTICAL TECHNIQUE FOR EVALUATING STANDING-WAVE EFFECT OF CHEMICALLY AMPLIFIED POSITIVE RESIST, JPN J A P 1, 32(12B), 1993, pp. 6071-6075
PERFORMANCE OF 0.2 MU-M OPTICAL LITHOGRAPHY USING KRF AND ARF EXCIMER-LASER SOURCES
Authors: YAMASHITA K ENDO M SASAGO M NOMURA N NAGANO H MIZUGUCHI S ONO T SATO T
Citation: K. Yamashita et al., PERFORMANCE OF 0.2 MU-M OPTICAL LITHOGRAPHY USING KRF AND ARF EXCIMER-LASER SOURCES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2692-2696
ALKALINE SOLUBLE POLYSILOXANE ELECTRON-BEAM RESIST FOR 0.2 MU-M RULE 256 MBIT DYNAMIC RANDOM-ACCESS MEMORY FABRICATION
Authors: HASHIMOTO K MATSUO T ENDO M SASAGO M NOMURA N
Citation: K. Hashimoto et al., ALKALINE SOLUBLE POLYSILOXANE ELECTRON-BEAM RESIST FOR 0.2 MU-M RULE 256 MBIT DYNAMIC RANDOM-ACCESS MEMORY FABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 281-285
QUARTER MICRON KRF EXCIMER LASER LITHOGRAPHY
Authors: SASAGO M ENDO M TANI Y KOBAYASHI S KOIZUMI T MATSUO T YAMASHITA K NOMURA N
Citation: M. Sasago et al., QUARTER MICRON KRF EXCIMER LASER LITHOGRAPHY, IEICE transactions on electronics, E76C(4), 1993, pp. 582-587
LITHOGRAPHY BEYOND 64MB
Authors: NOMURA N YAMASHITA K ENDO M SASAGO M
Citation: N. Nomura et al., LITHOGRAPHY BEYOND 64MB, Microelectronic engineering, 21(1-4), 1993, pp. 3-10
Risultati: 1-13 |