Authors: STESMANS A SCHEERLINCK F

Citation: A. Stesmans et F. Scheerlinck, ELECTRON-SPIN-RESONANCE ANALYSIS OF THE NATURAL INTRINSIC EX CENTER IN THERMAL SIO2 ON SI, Physical review. B, Condensed matter, 51(8), 1995, pp. 4987-4997

Authors: STESMANS A SCHEERLINCK F

Citation: A. Stesmans et F. Scheerlinck, PARAMETERS CONTROLLING THE GENERATION OF NATURAL INTRINSIC EX DEFECTSIN THERMAL SIO2 ON SI, Journal of non-crystalline solids, 187, 1995, pp. 119-123

Authors: STESMANS A SCHEERLINCK F

Citation: A. Stesmans et F. Scheerlinck, NATURAL INTRINSIC EX CENTER IN THERMAL SIO2 ON SI - O-17 HYPERFINE INTERACTION, Physical review. B, Condensed matter, 50(8), 1994, pp. 5204-5212

Authors: STESMANS A SCHEERLINCK F

Citation: A. Stesmans et F. Scheerlinck, GENERATION ASPECTS OF THE DELOCALIZED INTRINSIC EX DEFECT IN THERMAL SIO2, Journal of applied physics, 75(2), 1994, pp. 1047-1058

Authors: STESMANS A SCHEERLINCK F AFANASEV V

Citation: A. Stesmans et al., CHARGE-STATE OF THE NATURAL EX DEFECT IN THERMAL SIO2, Applied physics letters, 64(17), 1994, pp. 2282-2284

Authors: STESMANS A SCHEERLINCK F

Citation: A. Stesmans et F. Scheerlinck, NEW DEFECT IN AS-GROWN THERMAL SIO2 INHERENT TO THE GROWTH-PROCESS, Microelectronic engineering, 22(1-4), 1993, pp. 139-142