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Results: 1-8 |
Results: 8
IN-SITU X-RAY STANDING-WAVE ANALYSIS OF ELECTRODEPOSITED CU MONOLAYERS ON GAAS(001)
Authors: SCHERB G KAZIMIROV A ZEGENHAGEN J LEE TL BEDZYK MJ NOGUCHI H UOSAKI K
Citation: G. Scherb et al., IN-SITU X-RAY STANDING-WAVE ANALYSIS OF ELECTRODEPOSITED CU MONOLAYERS ON GAAS(001), Physical review. B, Condensed matter, 58(16), 1998, pp. 10800-10805
ELECTROCHEMICAL-CELL FOR IN-SITU X-RAY-DIFFRACTION UNDER ULTRAPURE CONDITIONS
Authors: KOOP T SCHINDLER W KAZIMIROV A SCHERB G ZEGENHAGEN J SCHULZ T FEIDENHANSL R KIRSCHNER J
Citation: T. Koop et al., ELECTROCHEMICAL-CELL FOR IN-SITU X-RAY-DIFFRACTION UNDER ULTRAPURE CONDITIONS, Review of scientific instruments, 69(4), 1998, pp. 1840-1843
A NOVEL THICK-LAYER ELECTROCHEMICAL-CELL FOR IN-SITU X-RAY-DIFFRACTION
Authors: SCHERB G KAZIMIROV A ZEGENHAGEN J
Citation: G. Scherb et al., A NOVEL THICK-LAYER ELECTROCHEMICAL-CELL FOR IN-SITU X-RAY-DIFFRACTION, Review of scientific instruments, 69(2), 1998, pp. 512-516
POLARITY DETERMINATION OF A GAN THIN-FILM ON SAPPHIRE (0001) WITH X-RAY STANDING WAVES
Authors: KAZIMIROV A SCHERB G ZEGENHAGEN J LEE TL BEDZYK MJ KELLY MK ANGERER H AMBACHER O
Citation: A. Kazimirov et al., POLARITY DETERMINATION OF A GAN THIN-FILM ON SAPPHIRE (0001) WITH X-RAY STANDING WAVES, Journal of applied physics, 84(3), 1998, pp. 1703-1705
POTENTIAL CONTROLLED STRIPPING OF AN AMORPHOUS AS LAYER ON GAAS(001) IN AN ELECTROLYTE - AN IN-SITU X-RAY-SCATTERING STUDY
Authors: SCHERB G KAZIMIROV A ZEGENHAGEN J SCHULTZ T FEIDENHANSL R FIMLAND BO
Citation: G. Scherb et al., POTENTIAL CONTROLLED STRIPPING OF AN AMORPHOUS AS LAYER ON GAAS(001) IN AN ELECTROLYTE - AN IN-SITU X-RAY-SCATTERING STUDY, Applied physics letters, 71(20), 1997, pp. 2990-2992
FORMATION OF TILTED CLUSTERS IN THE ELECTROCHEMICAL DEPOSITION OF COPPER ON N-GAAS(001)
Authors: SMILGIES DM FEIDENHANSL R SCHERB G KOLB DM KAZIMIROV A ZEGENHAGEN J
Citation: Dm. Smilgies et al., FORMATION OF TILTED CLUSTERS IN THE ELECTROCHEMICAL DEPOSITION OF COPPER ON N-GAAS(001), Surface science, 367(1), 1996, pp. 40-44
X-RAY-DIFFRACTION STUDY OF A SEMICONDUCTOR ELECTROLYTE INTERFACE - N-GAAS(001)/H2SO4(CU)/
Authors: ZEGENHAGEN J KAZIMIROV A SCHERB G KOLB DM SMILGIES DM FEIDENHANSL R
Citation: J. Zegenhagen et al., X-RAY-DIFFRACTION STUDY OF A SEMICONDUCTOR ELECTROLYTE INTERFACE - N-GAAS(001)/H2SO4(CU)/, Surface science, 352, 1996, pp. 346-351
CU DEPOSITION ONTO N-GAAS(100) - OPTICAL AND CURRENT TRANSIENT STUDIES
Authors: SCHERB G KOLB DM
Citation: G. Scherb et Dm. Kolb, CU DEPOSITION ONTO N-GAAS(100) - OPTICAL AND CURRENT TRANSIENT STUDIES, Journal of electroanalytical chemistry [1992], 396(1-2), 1995, pp. 151-159
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