Authors: MONGET C SCHILTZ A JOUBERT O VALLIER L GUILLERMET M TORMEN B

Citation: C. Monget et al., GERMANIUM ETCHING IN HIGH-DENSITY PLASMAS FOR 0.18 MU-M COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR GATE PATTERNING APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1833-1840

Authors: ROSENBEK JC ROBBINS J WILLFORD WO KIRK G SCHILTZ A SOWELL TW DEUTSCH SE MILANTI FJ ASHFORD J GRAMIGNA GD FOGARTY A DONG K RAU MT PRESCOTT TE LLOYD AM STERKEL MT HANSEN JE

Citation: Jc. Rosenbek et al., COMPARING TREATMENT INTENSITIES OF TACTILE-THERMAL APPLICATION, Dysphagia, 13(1), 1998, pp. 1-9

Authors: SCHILTZ A TERPAN JF AMBLARD G PANIEZ PJ

Citation: A. Schiltz et al., BOTTOM ANTIREFLECTIVE COATINGS FOR DUV LITHOGRAPHY - DETERMINATION OFOPTIMUM THERMAL-PROCESS CONDITIONS, Microelectronic engineering, 35(1-4), 1997, pp. 221-224

Authors: SCHILTZ A TERPAN JF BRUN S PANIEZ PJ

Citation: A. Schiltz et al., BOTTOM ANTIREFLECTIVE COATINGS - CONTROL OF THERMAL-PROCESSING, Microelectronic engineering, 30(1-4), 1996, pp. 283-286

Authors: SCHILTZ A

Citation: A. Schiltz, AN EMPIRICAL-MODEL FOR PLANARIZATION WITH POLYMER-SOLUTIONS, JPN J A P 1, 34(8A), 1995, pp. 4185-4194

Authors: SCHILTZ A PANIEZ PJ

Citation: A. Schiltz et Pj. Paniez, IN-SITU DETERMINATION OF PHOTORESIST GLASS-TRANSITION TEMPERATURE BY WAFER CURVATURE MEASUREMENT TECHNIQUES, Microelectronic engineering, 27(1-4), 1995, pp. 413-416