ACNP - Italian Periodicals Catalogue

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Results: 1-8 |

Results: 8

OPTICAL-PROPERTIES AND LASING OF ZNMGSSE ZNSSE/ZNSE HETEROSTRUCTURES GROWN BY MOVPE/

Authors: GURSKII AL LUTSENKO EV YABLONSKII GP HAMADEH H KALISCH H SCHINELLER B HEUKEN M

Citation: Al. Gurskii et al., OPTICAL-PROPERTIES AND LASING OF ZNMGSSE ZNSSE/ZNSE HETEROSTRUCTURES GROWN BY MOVPE/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 22-25

INVESTIGATION OF PROCESS TECHNOLOGIES FOR THE FABRICATION OF ALGAINP MESA ULTRA-HIGH BRIGHTNESS LIGHT-EMITTING DIODE

Authors: SCHINELLER B JUNAS Y HEUKEN M HEIME K

Citation: B. Schineller et al., INVESTIGATION OF PROCESS TECHNOLOGIES FOR THE FABRICATION OF ALGAINP MESA ULTRA-HIGH BRIGHTNESS LIGHT-EMITTING DIODE, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 34-38

OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Authors: YABLONSKII GP GURSKII AL LUTSENKO EV MARKO IP SCHINELLER B GUTTZEIT A SCHON O HEUKEN M HEIME K BECCARD R SCHMITZ D JUERGENSEN H

Citation: Gp. Yablonskii et al., OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 222-228

COMPARISON OF HYDROGEN AND NITROGEN AS CARRIER GAS FOR MOVPE GROWTH OF GAN

Authors: SCHON O SCHINELLER B HEUKEN M BECCARD R

Citation: O. Schon et al., COMPARISON OF HYDROGEN AND NITROGEN AS CARRIER GAS FOR MOVPE GROWTH OF GAN, Journal of crystal growth, 190, 1998, pp. 335-339

COMPENSATION EFFECTS IN MG-DOPED GAN EPILAYERS

Authors: ECKEY L VONGFUG U HOLST J HOFFMANN A SCHINELLER B HEIME K HEUKEN M SCHON O BECCARD R

Citation: L. Eckey et al., COMPENSATION EFFECTS IN MG-DOPED GAN EPILAYERS, Journal of crystal growth, 190, 1998, pp. 523-527

LIGHT-EMITTING-DIODES AS A MONITOR TO STUDY P-TYPE DOPING OF GAN-BASED HETEROSTRUCTURES GROWN BY MOVPE

Authors: SCHINELLER B GUTTZEIT A VERTOMMEN F SCHON O HEUKEN M HEIME K BECCARD R

Citation: B. Schineller et al., LIGHT-EMITTING-DIODES AS A MONITOR TO STUDY P-TYPE DOPING OF GAN-BASED HETEROSTRUCTURES GROWN BY MOVPE, Journal of crystal growth, 190, 1998, pp. 798-802

PHOTOLUMINESCENCE AND RAMAN-STUDY OF COMPENSATION EFFECTS IN MG-DOPEDGAN EPILAYERS

Authors: ECKEY L VONGFUG U HOLST J HOFFMANN A KASCHNER A SIEGLE H THOMSEN C SCHINELLER B HEIME K HEUKEN M SCHON O BECCARD R

Citation: L. Eckey et al., PHOTOLUMINESCENCE AND RAMAN-STUDY OF COMPENSATION EFFECTS IN MG-DOPEDGAN EPILAYERS, Journal of applied physics, 84(10), 1998, pp. 5828-5830

MOVPE GROWTH OF INPSB INAS HETEROSTRUCTURES FOR MIDINFRARED EMITTERS/

Authors: HEUKEN M EICHELSTREIBER CV BEHRES A SCHINELLER B HEIME K MENDORF C BROCKT G LAKNER H

Citation: M. Heuken et al., MOVPE GROWTH OF INPSB INAS HETEROSTRUCTURES FOR MIDINFRARED EMITTERS/, Journal of electronic materials, 26(10), 1997, pp. 1221-1224

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