Authors:
HOLLENSTEIN C
HOWLING AA
COURTEILLE C
MAGNI D
SCHOLZ SM
KROESEN GMW
SIMONS N
DEZEEUW W
SCHWARZENBACH W
Citation: C. Hollenstein et al., SILICON-OXIDE PARTICLE FORMATION IN RF PLASMAS INVESTIGATED BY INFRARED-ABSORPTION SPECTROSCOPY AND MASS-SPECTROMETRY, Journal of physics. D, Applied physics, 31(1), 1998, pp. 74-84
Authors:
VACASSY R
SCHOLZ SM
DUTTA J
PLUMMER CJG
HOURIET R
HOFMANN H
Citation: R. Vacassy et al., SYNTHESIS OF CONTROLLED SPHERICAL ZINC-SULFIDE PARTICLES BY PRECIPITATION FROM HOMOGENEOUS SOLUTIONS, Journal of the American Ceramic Society, 81(10), 1998, pp. 2699-2705
Citation: Sm. Scholz et K. Jacobi, DISSOCIATIVE ADSORPTION OF O-2 AND H2O ON SI(113) - CHEMICAL-SHIFTS OF THE SI 2P LEVEL, Surface science, 369(1-3), 1996, pp. 117-125
Citation: Sm. Scholz et K. Jacobi, CORE-LEVEL SHIFTS ON CLEAN AND ADSORBATE-COVERED SI(113) SURFACES, Physical review. B, Condensed matter, 52(8), 1995, pp. 5795-5802
Citation: Sm. Scholz et al., THE CLEAN AND HYDROGENATED GE(113) SURFACE STUDIED BY ANGLE-RESOLVED PHOTO-ELECTRON SPECTROSCOPY, Surface science, 333, 1995, pp. 402-408
Citation: Sm. Scholz et al., ON THE STRUCTURE AND ELECTRONIC-PROPERTIES OF THE GAAS(11(3)OVER-BAR)-B SURFACE, Surface science, 316(1-2), 1994, pp. 157-167