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Results:
1-7
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Results: 7
Authors:
YABLONSKII GP
GURSKII AL
LUTSENKO EV
MARKO IP
SCHINELLER B
GUTTZEIT A
SCHON O
HEUKEN M
HEIME K
BECCARD R
SCHMITZ D
JUERGENSEN H
Citation: Gp. Yablonskii et al., OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 222-228
Authors:
SCHON O
SCHINELLER B
HEUKEN M
BECCARD R
Citation: O. Schon et al., COMPARISON OF HYDROGEN AND NITROGEN AS CARRIER GAS FOR MOVPE GROWTH OF GAN, Journal of crystal growth, 190, 1998, pp. 335-339
Authors:
VONEICHELSTREIBER C
SCHON O
BECCARD R
SCHMITZ D
HEUKEN M
JURGENSEN H
Citation: C. Voneichelstreiber et al., MOVPE GROWTH OF HIGH-QUALITY III-NITRIDE MATERIAL FOR LIGHT-EMITTING DEVICE APPLICATIONS IN A MULTIWAFER SYSTEM, Journal of crystal growth, 190, 1998, pp. 344-348
Authors:
ECKEY L
VONGFUG U
HOLST J
HOFFMANN A
SCHINELLER B
HEIME K
HEUKEN M
SCHON O
BECCARD R
Citation: L. Eckey et al., COMPENSATION EFFECTS IN MG-DOPED GAN EPILAYERS, Journal of crystal growth, 190, 1998, pp. 523-527
Authors:
SCHINELLER B
GUTTZEIT A
VERTOMMEN F
SCHON O
HEUKEN M
HEIME K
BECCARD R
Citation: B. Schineller et al., LIGHT-EMITTING-DIODES AS A MONITOR TO STUDY P-TYPE DOPING OF GAN-BASED HETEROSTRUCTURES GROWN BY MOVPE, Journal of crystal growth, 190, 1998, pp. 798-802
Authors:
ECKEY L
VONGFUG U
HOLST J
HOFFMANN A
KASCHNER A
SIEGLE H
THOMSEN C
SCHINELLER B
HEIME K
HEUKEN M
SCHON O
BECCARD R
Citation: L. Eckey et al., PHOTOLUMINESCENCE AND RAMAN-STUDY OF COMPENSATION EFFECTS IN MG-DOPEDGAN EPILAYERS, Journal of applied physics, 84(10), 1998, pp. 5828-5830
Authors:
ZETTERLING CM
OSTLING M
NORDELL N
SCHON O
DESCHLER M
Citation: Cm. Zetterling et al., INFLUENCE OF GROWTH-CONDITIONS ON ELECTRICAL CHARACTERISTICS OF ALN ON SIC, Applied physics letters, 70(26), 1997, pp. 3549-3551
Risultati:
1-7
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