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Results:
1-7
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Results: 7
Authors:
SCHUERMEYER F
CERNY C
BOZADA C
FANG ZQ
LOOK DC
Citation: F. Schuermeyer et al., CHARGE STORAGE EFFECTS IN PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS, JPN J A P 1, 36(3B), 1997, pp. 1330-1334
Authors:
SCHUERMEYER F
Citation: F. Schuermeyer, CHARACTERIZATION OF FULLY FABRICATED PHEMTS USING PHOTOELECTRIC TECHNIQUES, Solid-state electronics, 41(10), 1997, pp. 1529-1533
Authors:
TSAI R
SCHUERMEYER F
PEATMAN WCB
SHUR M
Citation: R. Tsai et al., THE OPTOELECTRONIC RESPONSE OF A LATERALLY CONTACTED 2-D MESFET, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2300-2301
Authors:
SCHUERMEYER F
GRIDER D
IKOMA T
ISHIBASHI T
FUJISHIRO S
YOKOYAMA N
Citation: F. Schuermeyer et al., PROCEEDINGS OF THE TOPICAL WORKSHOP ON HETEROSTRUCTURE MICROELECTRONICS - PREFACE, Solid-state electronics, 38(9), 1995, pp. 7-7
Authors:
SCHUERMEYER F
CERNY C
LOEHR JP
SHERRIFF RE
Citation: F. Schuermeyer et al., PHOTOELECTRIC-EMISSION AND CONDUCTANCE STUDIES ON FULLY FABRICATED PHEMTS, Solid-state electronics, 38(9), 1995, pp. 1615-1618
Authors:
SCHUERMEYER F
SHUR M
MARTINEZ E
CERNY C
Citation: F. Schuermeyer et al., GATE CURRENTS IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS - CONTRIBUTION BY WARM ELECTRONS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 264-267
Authors:
MARTINEZ E
SHUR M
SCHUERMEYER F
Citation: E. Martinez et al., HETEROSTRUCTURE INSULATED GATE FIELD-EFFECT TRANSISTORS OPERATED IN HOT-ELECTRON REGIME, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 854-856
Risultati:
1-7
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