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Results: 1-8 |
Results: 8
NONSELECTIVE WET CHEMICAL ETCHING OF GAAS AND ALGAINP FOR DEVICE APPLICATIONS
Authors: ZAKNOUNE M SCHULER O MOLLOT F THERON D CROSNIER Y
Citation: M. Zaknoune et al., NONSELECTIVE WET CHEMICAL ETCHING OF GAAS AND ALGAINP FOR DEVICE APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 223-226
ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION (VOL 15, PG 1008, 1997)/
Authors: FOURRE H PESANT JC SCHULER O CAPPY A
Citation: H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION (VOL 15, PG 1008, 1997)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 255-255
A STUDY OF GAINP GAAS INTERFACES - METALLURGICAL COUPLING OF SUCCESSIVE QUANTUM-WELLS/
Authors: SCHULER O DEHAESE O WALLART X MOLLOT F
Citation: O. Schuler et al., A STUDY OF GAINP GAAS INTERFACES - METALLURGICAL COUPLING OF SUCCESSIVE QUANTUM-WELLS/, Superlattices and microstructures, 23(2), 1998, pp. 265-271
XPS STUDY OF GAINP ON GAAS INTERFACE
Authors: DEHAESE O WALLART X SCHULER O MOLLOT F
Citation: O. Dehaese et al., XPS STUDY OF GAINP ON GAAS INTERFACE, Applied surface science, 123, 1998, pp. 523-527
X-RAY PHOTOEMISSION CHARACTERIZATION OF INTERFACE ABRUPTNESS AND BAND-OFFSET OF GA0.5IN0.5P GROWN ON GAAS
Authors: DEHAESE O WALLART X SCHULER O MOLLOT F
Citation: O. Dehaese et al., X-RAY PHOTOEMISSION CHARACTERIZATION OF INTERFACE ABRUPTNESS AND BAND-OFFSET OF GA0.5IN0.5P GROWN ON GAAS, Journal of applied physics, 84(4), 1998, pp. 2127-2132
INTERFACE QUALITY AND ELECTRON-TRANSFER AT THE GAINP ON GAAS HETEROJUNCTION
Authors: SCHULER O DEHAESE O WALLART X MOLLOT F
Citation: O. Schuler et al., INTERFACE QUALITY AND ELECTRON-TRANSFER AT THE GAINP ON GAAS HETEROJUNCTION, Journal of applied physics, 84(2), 1998, pp. 765-769
AS SURFACE SEGREGATION DURING THE GROWTH OF GAINP ON GAAS
Authors: DEHAESE O WALLART X SCHULER O MOLLOT F
Citation: O. Dehaese et al., AS SURFACE SEGREGATION DURING THE GROWTH OF GAINP ON GAAS, JPN J A P 1, 36(11), 1997, pp. 6620-6624
ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION/
Authors: FOURRE H PESANT JC SCHULER O CAPPY A
Citation: H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1008-1010
Risultati: 1-8 |