Authors:
LI YQ
SALAMA CAT
SEUFERT M
SCHVAN P
KING M
Citation: Yq. Li et al., DESIGN AND CHARACTERIZATION OF SUBMICRON BICMOS COMPATIBLE HIGH-VOLTAGE NMOS AND PMOS DEVICES, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 331-338
Authors:
VOINIGESCU SP
MALIEPAARD MC
SHOWELL JL
BABCOCK GE
MARCHESAN D
SCHROTER M
SCHVAN P
HARAME DL
Citation: Sp. Voinigescu et al., A SCALABLE HIGH-FREQUENCY NOISE MODEL FOR BIPOLAR-TRANSISTORS WITH APPLICATION TO OPTIMAL TRANSISTOR SIZING FOR LOW-NOISE AMPLIFIER DESIGN, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1430-1439
Authors:
LI YQ
SALAMA CAT
SEUFERT M
SCHVAN P
KING M
Citation: Yq. Li et al., A RESURFED HIGH-VOLTAGE NMOS DEVICE FULLY COMPATIBLE WITH A LOW-VOLTAGE 0.8 MU-M BICMOS TECHNOLOGY, Solid-state electronics, 39(4), 1996, pp. 571-576