Authors: SHEKHOVTSOV LV SEMENOVA GN VENGER EF SACHENKO AV SADOFEV YG

Citation: Lv. Shekhovtsov et al., LONG-TERM RELAXATION OF THE PHOTOVOLTAGE IN A HETEROEPITAXIAL STRUCTURE, Technical physics letters, 23(6), 1997, pp. 430-432

Authors: SEMENOVA GN KRYSHTAB TG SHEKHOVTSOV LV SADOFEV YG

Citation: Gn. Semenova et al., MICROSTRUCTURE OF GERMANIUM FILMS PREPARE D THROUGH THE MOLECULAR-BEAM EPITAXY ON GALLIUM-ARSENIDE SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 22(5), 1996, pp. 75-80

Authors: SEMENOVA GN KRYSHTAB TG KLADKO VP KRUKOVSKII SI SVITELSKII AV

Citation: Gn. Semenova et al., PROPERTIES OF GAAS AND ALXGA1-XAS LAYERS GROWN FROM YTTERBIUM-DOPED GALLIUM MELTS BY LIQUID-PHASE EPITAXY, Inorganic materials, 32(8), 1996, pp. 807-809

Authors: SEMENOVA GN KLADKO VP KRYSHTAB TG SADOFEV YG SVITELSKII AV KORYTTSEV SV

Citation: Gn. Semenova et al., STRUCTURE DEFECTS AND PHOTOLUMINESCENCE OF EPITAXIAL INXGA1-XAS FILMS, Semiconductors, 27(1), 1993, pp. 86-89