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Results: 1-9 |
Results: 9
CONDUCTING WIRES EMBEDDED IN AN I-GAAS MATRIX FOR ELECTRONIC APPLICATIONS
Authors: KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP DEMIN AV
Citation: Va. Kulbachinskii et al., CONDUCTING WIRES EMBEDDED IN AN I-GAAS MATRIX FOR ELECTRONIC APPLICATIONS, Microelectronic engineering, 43-4, 1998, pp. 319-324
QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY AND DECREASE OF ELECTRON-CONCENTRATION BY HIGH ELECTRIC-FIELDS IN GAAS DELTA-DOPED BY SN ON VICINAL SUBSTRATE STRUCTURES
Authors: KULBACHINSKII VA LUNIN RA BOGDANOV EV KYTIN VG SENICHKIN AP
Citation: Va. Kulbachinskii et al., QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY AND DECREASE OF ELECTRON-CONCENTRATION BY HIGH ELECTRIC-FIELDS IN GAAS DELTA-DOPED BY SN ON VICINAL SUBSTRATE STRUCTURES, Physica. B, Condensed matter, 229(3-4), 1997, pp. 262-267
ELECTRON MIGRATIONS IN DIMENSIONAL QUANTI ZATION SUBZONES IN COMBINEDALLOYED GAAS GAALAS HETEROSTRUCTURES WITH HIGH-CONCENTRATION OF 2D-ELECTRONS/
Authors: KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP
Citation: Va. Kulbachinskii et al., ELECTRON MIGRATIONS IN DIMENSIONAL QUANTI ZATION SUBZONES IN COMBINEDALLOYED GAAS GAALAS HETEROSTRUCTURES WITH HIGH-CONCENTRATION OF 2D-ELECTRONS/, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 110(4), 1996, pp. 1517-1532
QUENCHING OF PHOTOCONDUCTIVITY BY A STRONG ELECTRIC-FIELD IN TIN DELTA-DOPED GAAS STRUCTURES
Authors: KULBACHINSKII VA LUNIN RA BOGDANOV EV KYTIN VG SENICHKIN AP KADUSHKIN VI
Citation: Va. Kulbachinskii et al., QUENCHING OF PHOTOCONDUCTIVITY BY A STRONG ELECTRIC-FIELD IN TIN DELTA-DOPED GAAS STRUCTURES, JETP letters, 63(5), 1996, pp. 336-341
LOW-TEMPERATURE SUBBAND 2D ELECTRON MOBILITIES IN HEAVY DELTA-DOPED AND MODULATION-DOPED GAAS GAALAS HETEROSTRUCTURES/
Authors: KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP DEVISSER A
Citation: Va. Kulbachinskii et al., LOW-TEMPERATURE SUBBAND 2D ELECTRON MOBILITIES IN HEAVY DELTA-DOPED AND MODULATION-DOPED GAAS GAALAS HETEROSTRUCTURES/, Czechoslovak journal of Physics, 46, 1996, pp. 2457-2458
LOW-TEMPERATURE NEGATIVE MAGNETORESISTANCE IN THE DELTA-DOPED BY SN AND SI ON VICINAL AND SINGULAR SUBSTRATES GAAS STRUCTURES
Authors: KYTIN VG KULBACHINSKII VA LUNIN RA BUGAEV AS SENICHKIN AP
Citation: Vg. Kytin et al., LOW-TEMPERATURE NEGATIVE MAGNETORESISTANCE IN THE DELTA-DOPED BY SN AND SI ON VICINAL AND SINGULAR SUBSTRATES GAAS STRUCTURES, Czechoslovak journal of Physics, 46, 1996, pp. 2513-2514
ANISOTROPY OF TRANSFER PHENOMENA IN STRUC TURES WITH DELTA-SN QUANTUMHOLES ON GAAS VICINAL FACETS
Authors: KULBACHINSKII VA KYTIN VG KADUSHKIN VI SENICHKIN AP
Citation: Va. Kulbachinskii et al., ANISOTROPY OF TRANSFER PHENOMENA IN STRUC TURES WITH DELTA-SN QUANTUMHOLES ON GAAS VICINAL FACETS, Fizika tverdogo tela, 37(9), 1995, pp. 2693-2698
CURRENT-VOLTAGE CHARACTERISTICS OF STRUCTURES WITH GAAS VICINAL FACESDELTA-DOPED WITH TIN
Authors: KADUSHKIN VI KULBACHINSKII VA BOGDANOV EV SENICHKIN AP
Citation: Vi. Kadushkin et al., CURRENT-VOLTAGE CHARACTERISTICS OF STRUCTURES WITH GAAS VICINAL FACESDELTA-DOPED WITH TIN, Semiconductors, 28(11), 1994, pp. 1042-1045
QUASI-1D ELECTRON CHANNELS AND 2D ELECTRON-GAS IN STRUCTURES WITH VICINAL FACES OF GAAS DELTA-DOPED WITH TIN
Authors: VISSER AD KADUSHKIN VI KULBACHINSKII VA KYTIN VG SENICHKIN AP SHANGINA EL
Citation: Ad. Visser et al., QUASI-1D ELECTRON CHANNELS AND 2D ELECTRON-GAS IN STRUCTURES WITH VICINAL FACES OF GAAS DELTA-DOPED WITH TIN, JETP letters, 59(5), 1994, pp. 363-368
Risultati: 1-9 |