Authors:
LEUSCHNER R
SCHMIDT E
OHLMEYER H
SEZI R
IRMSCHER M
Citation: R. Leuschner et al., BILAYER RESIST BASED ON WET SILYLATION (CARL PROCESS) FOR E-BEAM LITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 385-388
Authors:
LEUSCHNER R
AHNE H
MARQUARDT U
NICKEL U
SCHMIDT E
SEBALD M
SEZI R
Citation: R. Leuschner et al., PATTERNING OF ORGANIC LAYERS USING NEGATIVE AND POSITIVE WORKING TOP-CARL PROCESS, Microelectronic engineering, 21(1-4), 1993, pp. 255-258
Authors:
LEUSCHNER R
AHNE H
MARQUARDT U
NICKEL U
SCHMIDT E
SEBALD M
SEZI R
Citation: R. Leuschner et al., PATTERNING OF ORGANIC LAYERS USING NEGATIVE AND POSITIVE WORKING TOP-CARL PROCESS, Microelectronic engineering, 20(4), 1993, pp. 305-319