Authors: CHANDVANKAR SS SHAH AP ARORA BM

Citation: Ss. Chandvankar et al., DOPING AND SURFACE-MORPHOLOGY OF ALXGA1-XAS GAAS GROWN AT LOW-TEMPERATURE BY LIQUID-PHASE EPITAXY/, Journal of crystal growth, 186(3), 1998, pp. 329-337

Authors: GADKARI DB LAL KB SHAH AP ARORA BM

Citation: Db. Gadkari et al., GROWTH OF HIGH-MOBILITY INSB CRYSTALS, Journal of crystal growth, 173(3-4), 1997, pp. 585-588

Authors: ALI YP NARSALE AM BHAMBHANI U DAMLE A SALVI VP ARORA BM SHAH AP KANJILAL D

Citation: Yp. Ali et al., ELECTRICAL CHARACTERISTICS OF GAAS IMPLANTED WITH 70 MEV SN-120 IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(1-2), 1996, pp. 129-133