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Results:
1-13
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Results: 13
Authors:
YUSTA FJ
HITCHMAN ML
SHAMLIAN SH
Citation: Fj. Yusta et al., CVD-PREPARATION AND CHARACTERIZATION OF TIN DIOXIDE FILMS FOR ELECTROCHEMICAL APPLICATIONS, Journal of materials chemistry, 7(8), 1997, pp. 1421-1427
Authors:
HITCHMAN ML
SHAMLIAN SH
CONDORELLI GG
CHABERTROCABOIS F
Citation: Ml. Hitchman et al., A STUDY BY FTIR AND MASS-SPECTROSCOPY OF THE DECOMPOSITION OF PRECURSORS FOR THE MOCVD OF HIGH-TEMPERATURE SUPERCONDUCTORS, Journal of alloys and compounds, 251(1-2), 1997, pp. 297-302
Authors:
ROCABOIS P
HITCHMAN ML
SHAMLIAN SH
Citation: P. Rocabois et al., CONSIDERATIONS OF THE PRODUCTION OF C-60 THIN-FILMS BY PECVD, COMBUSTION, OR PYROLYSIS, CHEMICAL VAPOR DEPOSITION, 2(2), 1996, pp. 57-68
Authors:
KOVALGIN AY
CHABERTROCABOIS F
HITCHMAN ML
SHAMLIAN SH
ALEXANDROV SE
Citation: Ay. Kovalgin et al., A STUDY BY IN-SITU FTIR SPECTROSCOPY OF THE DECOMPOSITION OF PRECURSORS FOR THE MOCVD OF HIGH-TEMPERATURE SUPERCONDUCTORS, Journal de physique. IV, 5(C5), 1995, pp. 357-364
Authors:
KOVALGIN AY
CHABERTROCABOIS F
HITCHMAN ML
SHAMLIAN SH
ALEXANDROV SE
Citation: Ay. Kovalgin et al., A STUDY BY IN-SITU FTIR SPECTROSCOPY OF THE DECOMPOSITION OF PRECURSORS FOR THE MOCVD OF HIGH-TEMPERATURE SUPERCONDUCTORS, Journal de physique. IV, 5(C5), 1995, pp. 357-364
Authors:
ALEXANDROV SE
HITCHMAN ML
SHAMLIAN SH
Citation: Se. Alexandrov et al., REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS - THE EFFECT OF DILUTING NITROGEN WITH HELIUM, Journal of materials chemistry, 5(3), 1995, pp. 457-460
Authors:
HITCHMAN ML
SHAMLIAN SH
GILLILAND DD
COLEHAMILTON DJ
NASH JAP
THOMPSON SC
COOK SL
Citation: Ml. Hitchman et al., REPRODUCIBLE MOCVD OF BARIUM FLUORIDE - STUDIES OF THE EFFECT OF THE DEGREE OF PRECURSOR CRYSTALLINITY AND PURITY, Journal of materials chemistry, 5(1), 1995, pp. 47-52
Authors:
RICHARDS BC
COOK SL
PINCH DL
ANDREWS GW
LENGELING G
SCHULTE B
JURGENSEN H
SHEN YQ
VASE P
FRELTOFT T
SPEE CIMA
LINDEN JL
HITCHMAN ML
SHAMLIAN SH
BROWN A
Citation: Bc. Richards et al., MOCVD OF HIGH-QUALITY YBA2CU3O7-DELTA THIN-FILMS USING A FLUORINATED BARIUM PRECURSOR, Physica. C, Superconductivity, 252(3-4), 1995, pp. 229-236
Authors:
HITCHMAN ML
ZHAO JF
SHAMLIAN SH
Citation: Ml. Hitchman et al., STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .1. EFFECT ON GROWTH-RATE, Journal of materials chemistry, 4(12), 1994, pp. 1821-1826
Authors:
HITCHMAN ML
ZHAO JF
SHAMLIAN SH
Citation: Ml. Hitchman et al., STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .2. EFFECT ON CRYSTALLINITY, Journal of materials chemistry, 4(12), 1994, pp. 1827-1834
Authors:
HITCHMAN ML
ZHAO JF
SHAMLIAN SH
AFFROSSMAN S
HARTSHORNE M
MAYDELL EA
KHEYRANDISH H
Citation: Ml. Hitchman et al., STUDIES OF THE EFFECTS OF NF3 ON THE GROWTH OF POLYSILICON FILMS BY LOW-PRESSURE CVD .3. EFFECT ON COMPOSITION, Journal of materials chemistry, 4(12), 1994, pp. 1835-1842
Authors:
ALEXANDROV SE
HITCHMAN ML
SHAMLIAN SH
Citation: Se. Alexandrov et al., BONDED HYDROGEN IN SILICON-NITRIDE FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of materials chemistry, 4(12), 1994, pp. 1843-1847
Authors:
SHAMLIAN SH
HITCHMAN ML
COOK SL
RICHARDS BC
Citation: Sh. Shamlian et al., METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION OF YBCO USING A NEW, STABLE AND VOLATILE BARIUM PRECURSOR, Journal of materials chemistry, 4(1), 1994, pp. 81-85
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