AAAAAA

   
Results: 1-13 |
Results: 13

Authors: KADUSHKIN VI KLYSHEVICH EV SHANGINA EL TSAHHAEV FM
Citation: Vi. Kadushkin et al., ANISOTROPY AND ANOMALIES OF LOW-TEMPERATURE 2D-ELECTRON TRANSPORT IN DELTA-(SI,SN) DOPED NANOSTRUCTURES GROWN ON I-GAAS VICINAL PLANE, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 3-4, 1998, pp. 135-165

Authors: KADUSHKIN VI SHANGINA EL
Citation: Vi. Kadushkin et El. Shangina, OPTICAL ECHELETTE ON A VICINAL FACET OF SEMIINSULATING GAAS(CR), Optics and spectroscopy, 85(1), 1998, pp. 152-154

Authors: KADUSHKIN VI TSAKHKHAEV FM SHANGINA EL
Citation: Vi. Kadushkin et al., ENERGY-SPECTRUM OF A GAAS (DELTA-SN) STRUCTURE ON A VICINAL FACE, Physics of the solid state, 39(10), 1997, pp. 1655-1658

Authors: KADUSHKIN VI SHANGINA EL
Citation: Vi. Kadushkin et El. Shangina, ENERGY-SPECTRUM AND PHOTOLUMINESCENCE OF A GAAS (DELTA-SN) STRUCTURE GROWN ON A VICINAL FACE, Semiconductors, 30(9), 1996, pp. 876-878

Authors: BRANDT NB KULBACHINSKII VA KYTIN VG LUNIN RA KADUSHKIN VI SHANGINA EL DEVISSER A
Citation: Nb. Brandt et al., CHARACTERISTIC FEATURES OF TRANSPORT PHENOMENA IN ALTERNATIVELY DOPEDGAAS GA1-XALXAS HETEROSTRUCTURES/, Semiconductors, 30(4), 1996, pp. 365-367

Authors: KADUSHKIN VI SHANGINA EL
Citation: Vi. Kadushkin et El. Shangina, PHOTOLUMINESCENCE OF DOPED SPACED GAAS ALXGA1-XAS SUPERLATTICES/, Semiconductors, 29(6), 1995, pp. 544-549

Authors: KADUSHKIN VI SHANGINA EL KAPAEV VV KUCHERENKO IV PODLIVAEV AI RUDNEV IA SINCHENKO AA
Citation: Vi. Kadushkin et al., CURRENT-VOLTAGE CHARACTERISTIC OF AN ASYMMETRIC SYSTEM OF GAAS ALGAASQUANTUM-WELLS SEPARATED BY WIDE BARRIERS/, Semiconductors, 29(4), 1995, pp. 374-376

Authors: DEVISSER A KADUSHKIN VI KULBACHINSKII VA KYTIN VG SKOROKHODOV VM SHANGINA EL
Citation: A. Devisser et al., CHARACTERISTICS OF ELECTRON-SCATTERING IN MULTIPLE-QUANTUM HOLE SYSTEMS BASED ON GAAS-GAALAS WITH DELTA-ALLOYING, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 105(6), 1994, pp. 1701-1713

Authors: KULBACHINSKII VA DEVISSER A KADUSHKIN VI KYTIN VG SHANGINA EL
Citation: Va. Kulbachinskii et al., QUANTUM CORRECTIONS TO CONDUCTIVITY AND QUANTUM HALL-EFFECT IN GAAS-GAALAS MULTIPLE-QUANTUM-WELL STRUCTURES, Physica. B, Condensed matter, 194, 1994, pp. 1197-1198

Authors: KULBACHINSKII VA KYTIN VG KADUSHKIN VI SHANGINA EL DEVISSER A
Citation: Va. Kulbachinskii et al., QUANTUM CORRECTIONS TO THE CONDUCTIVITY AND QUANTUM HALL-EFFECT IN GAAS-GAALAS MULTIPLE-QUANTUM-WELL STRUCTURES, Journal of applied physics, 75(4), 1994, pp. 2081-2085

Authors: VISSER AD KADUSHKIN VI KULBACHINSKII VA KYTIN VG SENICHKIN AP SHANGINA EL
Citation: Ad. Visser et al., QUASI-1D ELECTRON CHANNELS AND 2D ELECTRON-GAS IN STRUCTURES WITH VICINAL FACES OF GAAS DELTA-DOPED WITH TIN, JETP letters, 59(5), 1994, pp. 363-368

Authors: KADUSHKIN VI SHANGINA EL
Citation: Vi. Kadushkin et El. Shangina, TRANSPORT PHENOMENA IN SPACED DOPED GAAS ALXGA1-XAS SUPERLATTICES/, Semiconductors, 27(8), 1993, pp. 725-729

Authors: KULBACHINSKII VA KADUSHKIN VI KYTIN VG SHANGINA EL
Citation: Va. Kulbachinskii et al., TRANSPORT PHENOMENA IN SPACED DOPED SUPER LATTICES, Fizika tverdogo tela, 35(7), 1993, pp. 1755-1763
Risultati: 1-13 |