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Results: 1-8 |
Results: 8
HETEROSTRUCTURE FE-INP INGAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: SHEI SC SU YK YOKOYAMA M
Citation: Sc. Shei et al., HETEROSTRUCTURE FE-INP INGAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 34(3), 1995, pp. 1413-1416
SIO2 INP STRUCTURE PREPARED BY DIRECT PHOTOCHEMICAL VAPOR-DEPOSITION USING DEUTERIUM LAMP AND ITS APPLICATIONS TO METAL-OXIDE-SEMICONDUCTORFIELD-EFFECT TRANSISTOR/
Authors: SHEI SC SU YK HWANG CJ YOKOYAMA M
Citation: Sc. Shei et al., SIO2 INP STRUCTURE PREPARED BY DIRECT PHOTOCHEMICAL VAPOR-DEPOSITION USING DEUTERIUM LAMP AND ITS APPLICATIONS TO METAL-OXIDE-SEMICONDUCTORFIELD-EFFECT TRANSISTOR/, JPN J A P 1, 34(2A), 1995, pp. 476-481
COMPOSITIONAL AND ELECTRICAL-PROPERTIES OF SI METAL-OXIDE-SEMICONDUCTOR STRUCTURE PREPARED BY DIRECT PHOTOENHANCED CHEMICAL-VAPOR-DEPOSITION USING A DEUTERIUM LAMP
Authors: SHEI SC SU YK HWANG CJ YOKOYAMA M PAN FM
Citation: Sc. Shei et al., COMPOSITIONAL AND ELECTRICAL-PROPERTIES OF SI METAL-OXIDE-SEMICONDUCTOR STRUCTURE PREPARED BY DIRECT PHOTOENHANCED CHEMICAL-VAPOR-DEPOSITION USING A DEUTERIUM LAMP, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(2), 1995, pp. 237-243
OBSERVATION OF QUANTUM-CONFINED STARK-EFFECT IN INXGA1-XAS GAAS SINGLE-QUANTUM-WELL BY PHOTOREFLECTANCE SPECTROSCOPY/
Authors: WANG DP CHEN CT KUAN H SHEI SC SU YK
Citation: Dp. Wang et al., OBSERVATION OF QUANTUM-CONFINED STARK-EFFECT IN INXGA1-XAS GAAS SINGLE-QUANTUM-WELL BY PHOTOREFLECTANCE SPECTROSCOPY/, Journal of applied physics, 78(3), 1995, pp. 2117-2119
STUDY ON SYMMETRY FORBIDDEN TRANSITIONS IN AN INXGA1-XAS GAAS SINGLE-QUANTUM-WELL BY TEMPERATURE-DEPENDENCE/
Authors: WANG DP CHEN CT KUAN H SHEI SC SU YK
Citation: Dp. Wang et al., STUDY ON SYMMETRY FORBIDDEN TRANSITIONS IN AN INXGA1-XAS GAAS SINGLE-QUANTUM-WELL BY TEMPERATURE-DEPENDENCE/, Journal of applied physics, 77(12), 1995, pp. 6500-6503
COMPARING REACTIVE ION ETCHING OF III-V COMPOUNDS IN CL-2 BCL3/AR ANDCCL2F2/BCL3/AR DISCHARGES/
Authors: JUANG YZ SU YK SHEI SC FANG BC
Citation: Yz. Juang et al., COMPARING REACTIVE ION ETCHING OF III-V COMPOUNDS IN CL-2 BCL3/AR ANDCCL2F2/BCL3/AR DISCHARGES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(1), 1994, pp. 75-82
INTERLEUKIN-8 MODULATES INTERLEUKIN-1-BETA, INTERLEUKIN-6 AND TUMOR-NECROSIS-FACTOR-ALPHA RELEASE FROM NORMAL HUMAN MONONUCLEAR-CELLS
Authors: YU CL SUN KH SHEI SC TSAI CY TSAI ST WANG JC LIAO TS LIN WM CHEN HL YU HS HAN SH
Citation: Cl. Yu et al., INTERLEUKIN-8 MODULATES INTERLEUKIN-1-BETA, INTERLEUKIN-6 AND TUMOR-NECROSIS-FACTOR-ALPHA RELEASE FROM NORMAL HUMAN MONONUCLEAR-CELLS, Immunopharmacology, 27(3), 1994, pp. 207-214
A STUDY OF SELECTIVE AND NONSELECTIVE REACTIVE ION ETCHING OF GAAS A1GAAS MATERIALS/
Authors: SU YK JUANG YZ SHEI SC FANG BC
Citation: Yk. Su et al., A STUDY OF SELECTIVE AND NONSELECTIVE REACTIVE ION ETCHING OF GAAS A1GAAS MATERIALS/, Solid-state electronics, 36(12), 1993, pp. 1779-1785
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