Authors:
SARGENT EH
SUDA DA
MARGITTAI A
SHEPHERD FR
CLEROUX M
KNIGHT G
PUETZ N
MAKINO T
SPRINGTHORPE AJ
CHIK G
XU JM
Citation: Eh. Sargent et al., EXPERIMENTAL-STUDY OF LCI LASERS FABRICATED BY SINGLE MOCVD OVERGROWTH FOLLOWED BY SELECTIVE DOPANT DIFFUSION, IEEE photonics technology letters, 10(11), 1998, pp. 1536-1538
Citation: Dy. Chen et al., THERMODYNAMICALLY STABLE TUNGSTEN OHMIC CONTACTS TO N-IN0.53GA0.47AS, Journal of materials research, 13(4), 1998, pp. 959-964
Authors:
BAINBRIDGE JD
SHARAFI AR
WHITE IH
COWIN MA
STEPHENS MFC
PENTY RV
GUILD KM
TZANAKAKI A
OMAHONY MJ
THOMPSON GHB
CLEMENTS SJ
ROGERS CB
MELVILLE D
SHEPHERD FR
Citation: Jd. Bainbridge et al., NEGLIGIBLE PENALTY ALL-OPTICAL ROUTING USING 12 X 12 PASSIVE INP WAVELENGTH-SELECTIVE ROUTER, Electronics Letters, 34(22), 1998, pp. 2151-2152
Authors:
BAINBRIDE JD
WHITE IH
PENTY RV
ASGHARI M
THOMPSON GHB
CLEMENTS SJ
ROGERS CB
MELVILLE D
SHEPHERD FR
Citation: Jd. Bainbride et al., DEMONSTRATION OF INTEGRATED 12 X 12 INGAASP INP GRATING WAVELENGTH ROUTER AT 2.5GBIT/S CHANNEL BIT RATES/, Electronics Letters, 33(17), 1997, pp. 1458-1459
Authors:
ADAMS DM
ROLLAND C
PUETZ N
MOORE RS
SHEPHERD FR
KIM HB
BRADSHAW S
Citation: Dm. Adams et al., MACH-ZEHNDER MODULATOR INTEGRATED WITH A GAIN-COUPLED DFB LASER FOR 10GBIT S, 100KM NDSF TRANSMISSION AT 1.55-MU-M/, Electronics Letters, 32(5), 1996, pp. 485-486
Authors:
AKANO UG
MITCHELL IV
SHEPHERD FR
MINER CJ
Citation: Ug. Akano et al., ION-IMPLANTATION DAMAGE OF INP AND INGAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 308-312
Authors:
SWOGER JH
SIMMONS JG
SHEPHERD FR
THOMPSON DA
BECKETT D
CLEROUX MN
Citation: Jh. Swoger et al., SPONTANEOUS OSCILLATIONS IN THE INP-INGAASP LASING OPTOELECTRONIC SWITCH (LOES), IEEE journal of quantum electronics, 31(7), 1995, pp. 1308-1314
Authors:
DZIOBA S
COOK JPD
HERAK TV
LIVERMORE S
YOUNG M
ROUSINA R
JATAR S
SHEPHERD FR
Citation: S. Dzioba et al., WAFER-SCALE PROCESSING OF INGAASP INP LASERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2848-2851
Authors:
BERRO N
COOK JPD
INGREY S
LESTER T
SHEPHERD FR
SURRIDGE R
WESTWOOD WD
Citation: N. Berro et al., AIRBORNE CONTAMINATION ON SEMICONDUCTOR WAFERS TRACED TO HUMIDIFICATION PLANT ADDITIVES, Journal of the IES, 36(6), 1993, pp. 15-18
Authors:
DZIOBA S
JATAR S
HERAK TV
COOK JPD
MARKS J
JONES T
SHEPHERD FR
Citation: S. Dzioba et al., HIGH-TEMPERATURE OPERATION OF INGAASP INP HETEROSTRUCTURE LASERS AND INTEGRATED BACK FACET MONITORS FABRICATED BY CHEMICALLY ASSISTED ION-BEAM ETCHING, Applied physics letters, 62(20), 1993, pp. 2486-2488
Authors:
AKANO UG
MITCHELL IV
SHEPHERD FR
MINER CJ
Citation: Ug. Akano et al., THE EFFECT OF IMPLANT TEMPERATURE AND BEAM FLUX ON DAMAGE ACCUMULATION AND SI ACTIVATION OF SI-IMPLANTED INP, Canadian journal of physics, 70(10-11), 1992, pp. 789-794
Authors:
COOK JPD
DZIOBA S
FOX K
MARITAN C
MARKS J
MCGARRY S
SHEPHERD FR
SVILANS M
ROUSINA R
Citation: Jpd. Cook et al., LONG-WAVELENGTH RIDGE-WAVE-GUIDE LASERS WITH PROCESSED FACETS AND INTEGRATED BACK-FACET MONITORS, Canadian journal of physics, 70(10-11), 1992, pp. 914-920