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Results: 1-12 |
Results: 12

Authors: SHIGEKAWA N ENOKI T FURUTA T
Citation: N. Shigekawa et al., ELECTROLUMINESCENCE FROM AN INGAAS-BASED HIGH-ELECTRON-MOBILITY TRANSISTOR DESIGNED FOR HIGH-SPEED OPERATION, JPN J A P 2, 36(7B), 1997, pp. 906-908

Authors: SHIGEKAWA N ENOKI T FURUTA T ITO H
Citation: N. Shigekawa et al., HIGH-ENERGY AND RECOMBINATION-INDUCED ELECTROLUMINESCENCE OF INALAS INGAAS HEMTS LATTICE-MATCHED TO INP SUBSTRATES/, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 513-519

Authors: ITO H YAMAHATA S SHIGEKAWA N KURISHIMA K MATSUOKA Y
Citation: H. Ito et al., GROWTH AND CHARACTERIZATION OF HIGH-SPEED CARBON-DOPED-BASE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 35(6A), 1996, pp. 3343-3349

Authors: ITO H YAMAHATA S SHIGEKAWA N KURISHIMA K
Citation: H. Ito et al., HEAVILY CARBON-DOPED BASE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY 2-STEP METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 35(12A), 1996, pp. 6139-6144

Authors: IDA M SHIGEKAWA N FURUTA T ITO H KOBAYASHI T
Citation: M. Ida et al., COMPOSITIONAL CHANGE NEAR THE MASK EDGE IN SELECTIVE INGAAS GROWTH BYLOW-TEMPERATURE MOCVD, Journal of crystal growth, 158(4), 1996, pp. 437-442

Authors: ITO H YAMAHATA S SHIGEKAWA N KURISHIMA K
Citation: H. Ito et al., HIGH F(MAX) CARBON-DOPED BASE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD/, Electronics Letters, 32(15), 1996, pp. 1415-1416

Authors: SHIGEKAWA N ENOKI T FURUTA T ITO H
Citation: N. Shigekawa et al., ELECTROLUMINESCENCE OF INALAS INGAAS HEMTS LATTICE-MATCHED TO INP SUBSTRATES/, IEEE electron device letters, 16(11), 1995, pp. 515-517

Authors: ITO H YAMAHATA S SHIGEKAWA N KURISHIMA K MATSUOKA Y
Citation: H. Ito et al., HIGH-SPEED CARBON-DOPED-BASE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD/, Electronics Letters, 31(24), 1995, pp. 2128-2130

Authors: SHIGEKAWA N BETON PH BUHMANN H EAVES L HENINI M JOHNSTON D
Citation: N. Shigekawa et al., AN (ALGA)AS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A RESONANT-TUNNELING COLLECTOR/, Semiconductor science and technology, 9(8), 1994, pp. 1500-1503

Authors: FURUTA T SHIGEKAWA N TOMIZAWA M
Citation: T. Furuta et al., ENERGY RELAXATION PROCESS OF PHOTOEXCITED ELECTRONS IN GAAS ALGAAS QUANTUM-WELL STRUCTURES/, Semiconductor science and technology, 9(5), 1994, pp. 453-455

Authors: SHIGEKAWA N FURUTA T ARAI K TOMIZAWA M
Citation: N. Shigekawa et al., PHOTOLUMINESCENCE STUDY OF UNDOPED-LIKE GAAS ALGAAS QUANTUM-WELLS IN HIGH ELECTRIC-FIELDS, Journal of applied physics, 74(2), 1993, pp. 1188-1194

Authors: SHIGEKAWA N YAMAGUCHI E
Citation: N. Shigekawa et E. Yamaguchi, EFFECTS OF DISORDER ON ELECTRONIC CONDUCTION PROPERTIES AT SUBSIDIARYENERGY MINIMA IN TERNARY INGAAS ALLOYS, Semiconductor science and technology, 7(3B), 1992, pp. 369-371
Risultati: 1-12 |