Authors: MATSUSHITA K SHIGENAKA K KAMATA A

Citation: K. Matsushita et al., ACHIEVEMENT OF LOW P-TYPE CARRIER-CONCENTRATION FOR MOCVD GROWTH HGCDTE WITHOUT AN ANNEALING PROCESS, Journal of crystal growth, 185, 1998, pp. 1228-1231

Authors: SHIGENAKA K MATSUSHITA K SUGIURA L NAKATA F HIRAHARA K UCHIKOSHI M NAGASHIMA M WADA H

Citation: K. Shigenaka et al., ORIENTATION DEPENDENCE OF HGCDTE EPITAXIAL LAYERS GROWN BY MOCVD ON SI SUBSTRATES, Journal of electronic materials, 25(8), 1996, pp. 1347-1352

Authors: SHIGENAKA K SUGIURA L NAKATA F HIRAHARA K

Citation: K. Shigenaka et al., LATTICE-RELAXATION IN LARGE MISMATCH SYSTEMS OF (111)CDTE (100)GAAS AND (133)CDTE/(211)GAAS LAYERS/, Journal of crystal growth, 145(1-4), 1994, pp. 376-381

Authors: SUGIURA L SHIGENAKA K NAKATA F HIRAHARA K

Citation: L. Sugiura et al., MISFIT DISLOCATION MICROSTRUCTURE AND KINETICS OF HGCDTE CDZNTE UNDERTENSILE AND COMPRESSIVE STRESS, Journal of crystal growth, 145(1-4), 1994, pp. 547-551

Authors: SUGIURA L SHIGENAKA K NAKATA F HIRAHARA K

Citation: L. Sugiura et al., INFLUENCE OF LATTICE MISMATCH ON THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF HGCDTE EPILAYERS, JPN J A P 1, 32, 1993, pp. 669-671

Authors: SHIGENAKA K SUGIURA L NAKATA F HIRAHARA K

Citation: K. Shigenaka et al., EFFECTS OF GROWTH-RATE AND MERCURY PARTIAL-PRESSURE ON TWIN FORMATIONIN HGCDTE (111) LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 22(8), 1993, pp. 865-871