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Results:
1-14
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Results: 14
Authors:
KOIKE H
ENDA T
MATSUOKA F
SHIGYO N
Citation: H. Koike et al., COUNTER-DOPED SURFACE CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HIGH-CURRENT DRIVABILITY AND STEEP SUBTHRESHOLD SLOPE, JPN J A P 1, 37(10), 1998, pp. 5503-5506
Authors:
IGA K
ISHIBASHI K
SHIGYO N
MATSUFUJI N
NAKAMOTO T
MAEHATA K
NUMAJIRI M
MEIGO S
TAKADA H
CHIBA S
NAKAMURA T
WATANABE Y
Citation: K. Iga et al., MEASUREMENT OF GAMMA-RAY PRODUCTION DOUBLE-DIFFERENTIAL CROSS-SECTIONS FOR THE SPALLATION REACTION INDUCED BY 0.8, 1.5 AND 3.0 GEV PROTONS, Journal of Nuclear Science and Technology, 35(5), 1998, pp. 329-334
Authors:
SHIGYO N
ISHIBASHI K
IGA K
KITSUKI H
ARIMA H
Citation: N. Shigyo et al., INCORPORATION OF THE FRAGMENTATION PROCESS INTO HIGH-ENERGY TRANSPORTCODE (HETC), Journal of Nuclear Science and Technology, 35(2), 1998, pp. 87-92
Authors:
SHIGYO N
SHIMANE T
SUDA M
ENDA T
FUKUDA S
Citation: N. Shigyo et al., VERIFICATION OF SATURATION VELOCITY LOWERING IN MOSFETS INVERSION LAYER, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 460-464
Authors:
NAKAMOTO T
ISHIBASHI K
MATSUFUJI N
SHIGYO N
MAEHATA K
ARIMA H
MEIGO S
TAKADA H
CHIBA S
NUMAJIRI M
Citation: T. Nakamoto et al., EXPERIMENTAL NEUTRON-PRODUCTION DOUBLE-DIFFERENTIAL CROSS-SECTION FORTHE NUCLEAR-REACTION BY 1,5-GEV PI(+) MESONS INCIDENT ON IRON, Journal of Nuclear Science and Technology, 34(8), 1997, pp. 860-862
Authors:
ISHIBASHI K
TAKADA H
NAKAMOTO T
SHIGYO N
MAEHATA K
MATSUFUJI N
MEIGO SI
CHIBA S
NUMAJIRI M
WATANABE Y
NAKAMURA T
Citation: K. Ishibashi et al., MEASUREMENT OF NEUTRON-PRODUCTION DOUBLE-DIFFERENTIAL CROSS-SECTIONS FOR NUCLEAR SPALLATION REACTION INDUCED BY 0.8, 1.5 AND 3.0 GEV PROTONS, Journal of Nuclear Science and Technology, 34(6), 1997, pp. 529-537
Authors:
YOSHIMI M
TERAUCHI M
NISHIYAMA A
ARISUMI O
MURAKOSHI AR
MATSUZAWA K
SHIGYO N
TAKENO S
TOMITA M
SUZUKI K
USHIKU Y
TANGO H
Citation: M. Yoshimi et al., SUPPRESSION OF THE FLOATING-BODY EFFECT IN SOI MOSFETS BY THE BANDGAPENGINEERING METHOD USING A SI1-XGEX SOURCE STRUCTURE, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 423-430
Authors:
TERAUCHI M
SHIGYO N
NITAYAMA A
HORIGUCHI F
Citation: M. Terauchi et al., DEPLETION ISOLATION EFFECT OF SURROUNDING GATE TRANSISTORS, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2303-2305
Authors:
ENDA T
SHIGYO N
Citation: T. Enda et N. Shigyo, ALLEVIATION OF SUBTHRESHOLD SWING AND SHORT-CHANNEL EFFECT IN BURIED-CHANNEL MOSFETS - THE COUNTER-DOPED SURFACE-CHANNEL MOSFET STRUCTURE, Electronics & communications in Japan. Part 2, Electronics, 79(11), 1996, pp. 43-50
Authors:
ARISUMI O
MATSUZAWA K
SHIGYO N
TERAUCHI M
NISHIYAMA A
YOSHIMI M
Citation: O. Arisumi et al., ANALYSIS OF SI-GE SOURCE STRUCTURE IN 0.15 MU-M SOI MOSFETS USING 2-DIMENSIONAL DEVICE SIMULATION, JPN J A P 1, 35(2B), 1996, pp. 992-995
Authors:
NAKAMOTO T
ISHIBASHI K
MATSUFUJI N
SHIGYO N
MAEHATA K
Citation: T. Nakamoto et al., CHARGED-PARTICLE IDENTIFICATION INCLUDING PIONS BY PULSE-SHAPE DISCRIMINATION WITH AN NE213 LIQUID SCINTILLATOR, Review of scientific instruments, 66(11), 1995, pp. 5327-5330
Authors:
NAKAMOTO T
ISHIBASHI K
MATSUFUJI N
SHIGYO N
MAEHATA K
MEIGO S
TAKADA H
CHIBA S
NUMAJIRI M
NAKAMURA T
WATANABE Y
Citation: T. Nakamoto et al., SPALLATION NEUTRON MEASUREMENT BY THE TIME-OF-FLIGHT METHOD WITH A SHORE FLIGHT PATH, Journal of Nuclear Science and Technology, 32(9), 1995, pp. 827-833
Authors:
SHIGYO N
SAKAGUCHI S
ISHIBASHI K
WAKUTA Y
Citation: N. Shigyo et al., PARAMETERIZATION OF FRAGMENTATION CROSS-SECTION FOR PROTON-INDUCED SPALLATION REACTION, Journal of Nuclear Science and Technology, 32(1), 1995, pp. 1-7
Authors:
SHIGYO N
NIITSU Y
Citation: N. Shigyo et Y. Niitsu, PHYSICAL MODELS FOR BIPOLAR DEVICE SIMULATION AND THEIR EFFECTS ON CUTOFF FREQUENCY, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2087-2089
Risultati:
1-14
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