Authors: TREW RJ SHIN MW GATTO V

Citation: Rj. Trew et al., HIGH-POWER APPLICATIONS FOR GAN-BASED DEVICES, Solid-state electronics, 41(10), 1997, pp. 1561-1567

Authors: SHIN MW TREW RJ BILBRO GL DREIFUS DL TESSMER AJ

Citation: Mw. Shin et al., TEMPERATURE-DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE DIAMOND FETS - MODELING AND EXPERIMENT, Journal of materials science. Materials in electronics, 6(2), 1995, pp. 111-114

Authors: SHIN MW TREW RJ

Citation: Mw. Shin et Rj. Trew, GAN MESFETS FOR HIGH-POWER AND HIGH-TEMPERATURE MICROWAVE APPLICATIONS, Electronics Letters, 31(6), 1995, pp. 498-500

Authors: SHIN MW TREW RJ BILBRO GL

Citation: Mw. Shin et al., HIGH-TEMPERATURE DC AND RF PERFORMANCE OF P-TYPE DIAMOND MESFET - COMPARISON WITH N-TYPE GAAS-MESFET, IEEE electron device letters, 15(8), 1994, pp. 292-294