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Results: 6

Authors: SUGAI K KISHIDA S SHINZAWA T OKABAYASHI H YAKO T KADOKURA H ISEMURA M KOBAYASHI T HOSOKAWA N
Citation: K. Sugai et al., ALUMINUM METALLIZATION USING A COMBINATION OF CHEMICAL-VAPOR-DEPOSITION AND SPUTTERING, Journal of the Electrochemical Society, 144(3), 1997, pp. 1028-1035

Authors: SHINZAWA T SUGAI K HAYASHI Y NAKAJIMA T KISHIDA S OKABAYASHI H TSUNENARI K MURAO Y KOBAYASHI A
Citation: T. Shinzawa et al., BARRIER LAYERLESS SUBMICRON ALUMINUM-DAMASCENE INTERCONNECTION USING ALUMINUM CHEMICAL-VAPOR-DEPOSITION WITH A NEW NUCLEATION METHOD, Electronics & communications in Japan. Part 2, Electronics, 79(5), 1996, pp. 88-96

Authors: SUGAI K OKABAYASHI H KISHIDA S SHINZAWA T
Citation: K. Sugai et al., TITANIUM-CONTAINING HYDROFLUORIC-ACID PRETREATMENT FOR ALUMINUM CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 280(1-2), 1996, pp. 142-146

Authors: KOBAYASHI A SEKIGUCHI A OKADA O HOSOKAWA N SUGAI K KISHIDA S OKABAYASHI H SHINZAWA T YAKO T KADOKURA H
Citation: A. Kobayashi et al., GROWTH-PROCESS OF THIN CHEMICAL-VAPOR DEPOSITION-ALUMINUM FILMS AND ITS UNDERLAYER DEPENDENCE - REAL-TIME MONITORING OF REFLECTED LIGHT-INTENSITY AT THE DEPOSITING SURFACE, Electronics & communications in Japan. Part 2, Electronics, 78(12), 1995, pp. 50-58

Authors: SUGAI K OKABAYASHI H SHINZAWA T KISHIDA S KOBAYASHI A YAKO T KADOKURA H
Citation: K. Sugai et al., ALUMINUM CHEMICAL-VAPOR-DEPOSITION WITH NEW GAS-PHASE PRETREATMENT USING TETRAKISDIMETHYLAMINO-TITANIUM FOR ULTRALARGE-SCALE INTEGRATED-CIRCUIT METALLIZATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2115-2118

Authors: ISHIWATA T SHINZAWA T SI JH OBI K TANAKA I
Citation: T. Ishiwata et al., OPTICAL OPTICAL DOUBLE-RESONANCE SPECTROSCOPY OF CL2 - ANALYSES OF THE 0U-3(2)) ION-PAIR STATES(, 1U, AND 2U(P), Journal of molecular spectroscopy, 166(2), 1994, pp. 321-337
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