AAAAAA
Results:
1-8
|
Results: 8
Authors:
GOLUBEV LV
EGOROV AV
NOVIKOV SV
SHMARTSEV YV
Citation: Lv. Golubev et al., LIQUID-PHASE ELECTROEPITAXY OF III-V SEMICONDUCTORS, Journal of crystal growth, 146(1-4), 1995, pp. 277-282
Authors:
MAKAROVA TL
SHARONOVA LV
SHMARTSEV YV
Citation: Tl. Makarova et al., ELLIPSOMETRIC INVESTIGATIONS OF ANODIC OXIDE ON GA1-XALXAS SOLID-SOLUTIONS (VOL 27, PG 1008-1016, 1993), Semiconductors, 28(5), 1994, pp. 530-530
Authors:
BER BY
BYSTROV SD
ZUSHINSKII DA
KORNYAKOVA OV
TUAN L
NOVIKOV SV
SAVELEV IG
TRETYAKOV VV
CHALDYSHEV VV
SHMARTSEV YV
Citation: By. Ber et al., FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES, Semiconductors, 27(9), 1993, pp. 818-820
Authors:
KAVALYAUSKAS Y
KRIVAIITE G
SHILEIKA A
SHARONOVA LV
SHMARTSEV YV
Citation: Y. Kavalyauskas et al., MODULATION SPECTRA OF DOPED GAAS-AL0.3GA0.7AS QUANTUM-WELL STRUCTURES, Semiconductors, 27(7), 1993, pp. 598-602
Authors:
TUAN L
NOVIKOV SV
SAVELEV IG
SHELKOVNIKOV DN
SHMARTSEV YV
Citation: L. Tuan et al., DOPING OF EPITAXIAL GAAS FILMS BY A ZN ACCEPTOR IMPURITY DURING LIQUID-PHASE EPITAXY FROM GA-BI MOLTEN SOLUTIONS, Semiconductors, 27(6), 1993, pp. 546-550
Authors:
AVERIN SV
NOVIKOV SV
MESKIDAKUSTERS A
POTAPOV VT
HEIME K
TSAREV AN
SHMARTSEV YV
Citation: Sv. Averin et al., METAL-SEMICONDUCTOR-METAL PHOTODIODE STRUCTURES WITH A LOW DARK CURRENT-DENSITY, Semiconductors, 27(11-12), 1993, pp. 996-998
Authors:
MAKAROVA TL
SHARONOVA LV
SHMARTSEV YV
Citation: Tl. Makarova et al., ELLIPSOMETRIC INVESTIGATIONS OF ANODIC OXIDE ON GA1-XALXAS SOLID-SOLUTIONS, Semiconductors, 27(11-12), 1993, pp. 1008-1016
Authors:
NOVIKOV SV
SAVELEV IG
PANEK M
PASHKEVICH R
TLACHALA M
SHMARTSEV YV
Citation: Sv. Novikov et al., STUDY OF STRATIFICATION PROCESSES IN GA-B I SOLUTIONS-FUSIONS, Pis'ma v Zurnal tehniceskoj fiziki, 19(14), 1993, pp. 70-72
Risultati:
1-8
|