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Results: 1-8 |
Results: 8
DIFFUSION FROM POLYMER SPIN-ON FILMS - MEASUREMENTS AND SIMULATIONS
Authors: BER BY GUK EG KAMANIN AV KUDRYAVTSEV YA MOKINA LA SHMIDT NM SHUMAN VB BUSYGINA LA YURRE TA
Citation: By. Ber et al., DIFFUSION FROM POLYMER SPIN-ON FILMS - MEASUREMENTS AND SIMULATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 426-429
EXPERIMENTAL STUDIES OF THE INITIAL DIFFUSION STAGE IN SEMICONDUCTORS
Authors: KAMANIN AV BUSYGINA LA GUK EG KUDRYAVTSEV YA MOKINA IA SHMIDT NM SHUMAN VB YURRE TA
Citation: Av. Kamanin et al., EXPERIMENTAL STUDIES OF THE INITIAL DIFFUSION STAGE IN SEMICONDUCTORS, Computational materials science, 11(2), 1998, pp. 101-104
DOPING OF ZNSE DURING MOLECULAR-BEAM EPITAXY USING A HIGH-EFFICIENCY SOURCE OF ACTIVE NITROGEN
Authors: ZHMERIK VN IVANOV SV MAKSIMOV MV KUZNETSOV VM LEDENTSOV NN SOROKIN SV DOMRACHEV SN SHMIDT NM KRESTNIKOV IL KOPEV PS
Citation: Vn. Zhmerik et al., DOPING OF ZNSE DURING MOLECULAR-BEAM EPITAXY USING A HIGH-EFFICIENCY SOURCE OF ACTIVE NITROGEN, Semiconductors, 30(6), 1996, pp. 568-574
SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY OF CLEAVAGE SURFACES OF ZNSE GAAS HETEROSTRUCTURES/
Authors: ANKUDINOV AV TITKOV AN IVANOV SV SOROKIN SV SHMIDT NM KOPEV PS
Citation: Av. Ankudinov et al., SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY OF CLEAVAGE SURFACES OF ZNSE GAAS HETEROSTRUCTURES/, Semiconductors, 30(4), 1996, pp. 393-396
TIME DRIFT OF PARAMETERS OF INDIUM PHOSPH IDE-SILICON DIOXIDE INTERFACE
Authors: BERMAN LS GABARAEVA AD KAMANIN AV KARIMOV I KLYACHKIN LE SHARONOVA LV SHMIDT NM
Citation: Ls. Berman et al., TIME DRIFT OF PARAMETERS OF INDIUM PHOSPH IDE-SILICON DIOXIDE INTERFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 65-69
ASSOCIATION OF TIME INSTABILITY OF THE INP-SIO2 INTERFACE CHARACTERISTICS WITH BULK PROPERTIES OF THE INSULATOR
Authors: BERMAN LS DENISOV DV GABARAEVA AD KAMANIN AV KARIMOV I SHARONOVA LV SHMIDT NM SMOLSKY OV
Citation: Ls. Berman et al., ASSOCIATION OF TIME INSTABILITY OF THE INP-SIO2 INTERFACE CHARACTERISTICS WITH BULK PROPERTIES OF THE INSULATOR, Semiconductor science and technology, 11(11), 1996, pp. 1688-1691
PECULIARITIES OF THE INITIAL-STAGE OF ZN DIFFUSION INTO INP FROM POLYMER SPIN-ON FILMS
Authors: KAMANIN AV MOKINA IA SHMIDT NM
Citation: Av. Kamanin et al., PECULIARITIES OF THE INITIAL-STAGE OF ZN DIFFUSION INTO INP FROM POLYMER SPIN-ON FILMS, Solid-state electronics, 39(10), 1996, pp. 1441-1444
RARE-EARTH ELEMENTS IN THE TECHNOLOGY OF INP, INGAASP AND DEVICES BASED ON THESE SEMICONDUCTOR COMPOUNDS
Authors: GORELENOK AT KAMANIN AV SHMIDT NM
Citation: At. Gorelenok et al., RARE-EARTH ELEMENTS IN THE TECHNOLOGY OF INP, INGAASP AND DEVICES BASED ON THESE SEMICONDUCTOR COMPOUNDS, Microelectronics, 26(7), 1995, pp. 705-723
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