AAAAAA
Results:
1-25
|
Results: 25
Authors:
SARFATY M
BAUM C
HARPER M
HERSHKOWITZ N
SHOHET JL
Citation: M. Sarfaty et al., REAL-TIME MONITORING AND CONTROL OF PLASMA-ETCHING, JPN J A P 1, 37(4B), 1998, pp. 2381-2387
Authors:
SARFATY M
BAUM C
HARPER M
HERSHKOWITZ N
SHOHET JL
Citation: M. Sarfaty et al., REAL-TIME DETERMINATION OF PLASMA ETCH-RATE SELECTIVITY, Plasma sources science & technology (Print), 7(4), 1998, pp. 581-589
Authors:
WANG W
BOOSKE JH
LIU HL
GEARHART SS
SHOHET JL
BEDELL S
LANFORD W
Citation: W. Wang et al., TIN PREPARED BY PLASMA SOURCE ION-IMPLANTATION OF NITROGEN INTO TI ASA DIFFUSION BARRIER FOR SI CU METALLIZATION/, Journal of materials research, 13(3), 1998, pp. 726-730
Authors:
DAHI H
TALMADGE JN
SHOHET JL
Citation: H. Dahi et al., NONLINEAR VISCOSITY IN THE INTERCHANGEABLE MODULE STELLARATOR, Physical review letters, 80(18), 1998, pp. 3976-3979
Authors:
CISMARU C
SHOHET JL
NAUKA K
FRIEDMANN JB
Citation: C. Cismaru et al., RELATIONSHIP BETWEEN THE CHARGING DAMAGE OF TEST STRUCTURES AND THE DEPOSITED CHARGE ON UNPATTERNED WAFERS EXPOSED TO AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 72(10), 1998, pp. 1143-1145
Authors:
FRIEDMANN JB
SHOHET JL
MAU R
HERSHKOWITZ N
BISGAARD S
MA SM
MCVITTIE JP
Citation: Jb. Friedmann et al., PLASMA-PARAMETER DEPENDENCE OF THIN-OXIDE DAMAGE FROM WAFER CHARGING DURING ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING, IEEE transactions on semiconductor manufacturing, 10(1), 1997, pp. 154-166
Authors:
BOOSKE JH
ZHANG L
WANG W
MENTE K
ZJABA N
BAUM C
SHOHET JL
Citation: Jh. Booske et al., NITROGEN PLASMA SOURCE ION-IMPLANTATION FOR CORROSION PROTECTION OF ALUMINUM 6061-T4, Journal of materials research, 12(5), 1997, pp. 1356-1366
Authors:
SHOHET JL
Citation: Jl. Shohet, UNTITLED, IEEE transactions on plasma science, 25(6), 1997, pp. 1173-1173
Authors:
PIPER M
SHOHET JL
BOOSKE JH
CHEW KH
ZHANG L
SANDSTROM P
JACOBS J
Citation: M. Piper et al., X-RAY-IMAGING DURING PLASMA-SOURCE ION-IMPLANTATION, Plasma chemistry and plasma processing, 16(1), 1996, pp. 141-152
Authors:
THOGERSEN EN
SHOHET JL
Citation: En. Thogersen et Jl. Shohet, A NEGATIVE BIASING EXPERIMENT TO TEST NUMERICAL-CALCULATIONS BASED ONA NEOCLASSICAL L-H TRANSITION MODEL IN STELLARATORS, IEEE transactions on plasma science, 24(6), 1996, pp. 1394-1398
Authors:
SHOHET JL
NAUKA K
RISSMAN P
Citation: Jl. Shohet et al., DEPOSITED CHARGE MEASUREMENTS ON SILICON-WAFERS AFTER PLASMA TREATMENT, IEEE transactions on plasma science, 24(1), 1996, pp. 75-76
Authors:
PETERSON BJ
TALMADGE JN
ANDERSON DT
ANDERSON FSB
MATTHEWS PG
SHOHET JL
Citation: Bj. Peterson et al., MEASUREMENT OF PLASMA FLOWS IN IMS, Fusion technology, 27, 1995, pp. 215-218
Authors:
ANDERSON FSB
ALMAGRI AF
ANDERSON DT
MATTHEWS PG
TALMADGE JN
SHOHET JL
Citation: Fsb. Anderson et al., THE HELICALLY SYMMETRICAL EXPERIMENT, (HSX) GOALS, DESIGN AND STATUS, Fusion technology, 27, 1995, pp. 273-277
Authors:
CHEW KH
CHEN J
WOODS RC
SHOHET JL
Citation: Kh. Chew et al., SILICON-OXIDE DEPOSITION IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA WITH MICROWAVE SPECTROSCOPIC MONITORING OF SIO, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2483-2489
Authors:
ZHANG L
BOOSKE JH
SHOHET JL
Citation: L. Zhang et al., ANTICORROSIVE SURFACE MODIFICATION OF 6061-ALUMINUM USING PLASMA SOURCE ION-IMPLANTATION, Materials letters, 22(1-2), 1995, pp. 29-33
Authors:
ASHTIANI KA
SHOHET JL
HITCHON WNG
KIM GH
HERSHKOWITZ N
Citation: Ka. Ashtiani et al., A 2-DIMENSIONAL PARTICLE-IN-CELL SIMULATION OF AN ELECTRON-CYCLOTRON-RESONANCE ETCHING TOOL, Journal of applied physics, 78(4), 1995, pp. 2270-2278
Authors:
FRIEDMANN JB
SHOHET JL
MCVITTIE JP
MA SM
Citation: Jb. Friedmann et al., THIN-OXIDE CHARGING DAMAGE TO MICROELECTRONIC TEST STRUCTURES IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 67(25), 1995, pp. 3718-3720
Authors:
ZHANG L
BOOSKE JH
COOPER RF
SHOHET JL
JACOBS JR
ANDERSON FSB
GOECKNER MJ
WICKSBERG EB
WAS G
Citation: L. Zhang et al., PLASMA-IMMERSED OXYGEN-ION IMPLANTATION OF IRON-DOPED GLASS FOR NONMETALLIC MAGNETIC HARD DISKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3342-3346
Authors:
SHOHET JL
WICKESBERG EB
KUSHNER MJ
Citation: Jl. Shohet et al., COMPUTER-SIMULATION OF MASS-SELECTIVE PLASMA-SOURCE ION-IMPLANTATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1380-1386
Authors:
PETERSON BJ
TALMADGE JN
ANDERSON DT
ANDERSON FSB
SHOHET JL
Citation: Bj. Peterson et al., MEASUREMENT OF ION FLOWS USING AN UNMAGNETIZED MACH PROBE IN THE INTERCHANGEABLE MODULE STELLARATOR, Review of scientific instruments, 65(8), 1994, pp. 2599-2606
Authors:
MAHONEY LJ
WENDT AE
BARRIOS E
RICHARDS CJ
SHOHET JL
Citation: Lj. Mahoney et al., ELECTRON-DENSITY AND ENERGY-DISTRIBUTIONS IN A PLANAR INDUCTIVELY-COUPLED DISCHARGE, Journal of applied physics, 76(4), 1994, pp. 2041-2047
Authors:
ZHANG L
SHOHET JL
DALLMANN D
BOOSKE JH
SPETH RR
SHENAI K
GOECKNER MJ
KRUGER JB
RISSMAN P
TURNER JE
PEREZALBUERNE E
LEE S
MEYYAPPAN N
Citation: L. Zhang et al., LOW-ENERGY SEPARATION BY IMPLANTATION OF OXYGEN STRUCTURES VIA PLASMASOURCE ION-IMPLANTATION, Applied physics letters, 65(8), 1994, pp. 962-964
Authors:
MATTHEWS PG
ANDERSON DT
ANDERSON FSB
SHOHET JL
TALMADGE JN
Citation: Pg. Matthews et al., FLUCTUATION-INDUCED TRANSPORT AND POLOIDAL ROTATION IN THE INTERCHANGEABLE MODULE STELLARATOR, Physics of fluids. B, Plasma physics, 5(11), 1993, pp. 4061-4071
Authors:
SHOHET JL
Citation: Jl. Shohet, PLASMA-AIDED MANUFACTURING, Journal of fusion energy, 12(4), 1993, pp. 349-360
Authors:
SHOHET JL
Citation: Jl. Shohet, THE ENGINEERING RESEARCH-CENTER FOR PLASMA-AIDED MANUFACTURING, Proceedings of the IEEE, 81(1), 1993, pp. 60-78
Risultati:
1-25
|