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STRUCTURE AND ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS GROWN BY MOLECULAR-BEAM DEPOSITION ACCOMPANIED BY LOW-ENERGY ION-BOMBARDMENT OF THE GROWTH SURFACE
Authors: PAVLOV DA KHOKHLOV AF SHUNGUROV DV SHENGUROV VG
Citation: Da. Pavlov et al., STRUCTURE AND ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS GROWN BY MOLECULAR-BEAM DEPOSITION ACCOMPANIED BY LOW-ENERGY ION-BOMBARDMENT OF THE GROWTH SURFACE, Semiconductors, 31(3), 1997, pp. 237-240
STRUCTURE AND ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS GROWN BY MOLECULAR-BEAM DEPOSITION ACCOMPANIED BY LOW-ENERGY ION-BOMBARDMENT OF THE GROWTH SURFACE (VOL 31, PG 237, 1997)
Authors: PAVLOV DA KHOKHLOV AF SHUNGUROV DV SHENGUROV VG
Citation: Da. Pavlov et al., STRUCTURE AND ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS GROWN BY MOLECULAR-BEAM DEPOSITION ACCOMPANIED BY LOW-ENERGY ION-BOMBARDMENT OF THE GROWTH SURFACE (VOL 31, PG 237, 1997), Semiconductors, 31(10), 1997, pp. 1099-1099
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