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Results: 1-9 |
Results: 9
CORRECTION ON THE VAPOR COMPOSITION OF ZNSE DETERMINED WITH A MODIFIED KNUDSEN TECHNIQUE (VOL 100, PG 1766, 1996)
Authors: SCHONHERR E FREIBERG M SICHE D HARTMANN H
Citation: E. Schonherr et al., CORRECTION ON THE VAPOR COMPOSITION OF ZNSE DETERMINED WITH A MODIFIED KNUDSEN TECHNIQUE (VOL 100, PG 1766, 1996), Berichte der Bunsengesellschaft fur Physikalische Chemie, 102(4), 1998, pp. 704-704
INVESTIGATION OF THE INTERFACIAL QUALITY AND THE INFLUENCE OF DIFFERENT SUBSTRATES IN ZNSE HOMOEPITAXY
Authors: WENISCH H BEHR T KREISSL J SCHULL K SICHE D HARTMANN H HOMMEL D
Citation: H. Wenisch et al., INVESTIGATION OF THE INTERFACIAL QUALITY AND THE INFLUENCE OF DIFFERENT SUBSTRATES IN ZNSE HOMOEPITAXY, Journal of crystal growth, 174(1-4), 1997, pp. 751-756
GROWTH OF BULK ZNSE CRYSTALS - RECENT DEVELOPMENTS
Authors: SICHE D HARTMANN H BOTTCHER K KRAUSE E
Citation: D. Siche et al., GROWTH OF BULK ZNSE CRYSTALS - RECENT DEVELOPMENTS, Physica status solidi. b, Basic research, 194(1), 1996, pp. 101-108
MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSE ON (001)ZNSE SUBSTRATES AND ITS APPLICATION IN LIGHT-EMITTING-DIODES
Authors: WENISCH H SCHULL K HOMMEL D LANDWEHR G SICHE D HARTMANN H
Citation: H. Wenisch et al., MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSE ON (001)ZNSE SUBSTRATES AND ITS APPLICATION IN LIGHT-EMITTING-DIODES, Semiconductor science and technology, 11(1), 1996, pp. 107-115
SOURCE-MATERIAL DEPENDENT GROWTH LIMITATIONS IN UNSEEDED DISSOCIATIVESUBLIMATION OF ZNSE
Authors: SICHE D HARTMANN H
Citation: D. Siche et H. Hartmann, SOURCE-MATERIAL DEPENDENT GROWTH LIMITATIONS IN UNSEEDED DISSOCIATIVESUBLIMATION OF ZNSE, Journal of Materials Science, 31(23), 1996, pp. 6171-6175
(CD,ZN)SE MULTI-QUANTUM-WELL LEDS - HOMOEPITAXY ON ZNSE SUBSTRATES AND HETEROEPITAXY ON (IN,GA)AS GAAS BUFFER LAYERS/
Authors: WENISCH H SCHULL K BEHR T HOMMEL D LANDWEHR G SICHE D RUDOLPH P HARTMANN H
Citation: H. Wenisch et al., (CD,ZN)SE MULTI-QUANTUM-WELL LEDS - HOMOEPITAXY ON ZNSE SUBSTRATES AND HETEROEPITAXY ON (IN,GA)AS GAAS BUFFER LAYERS/, Journal of crystal growth, 159(1-4), 1996, pp. 26-31
INVESTIGATION OF THE TRANSITION RANGE IN SEEDED VAPOR-GROWN ZNSE CRYSTALS
Authors: GEISSLER U HARTMANN H KRAUSE E SICHE D
Citation: U. Geissler et al., INVESTIGATION OF THE TRANSITION RANGE IN SEEDED VAPOR-GROWN ZNSE CRYSTALS, Journal of crystal growth, 159(1-4), 1996, pp. 175-180
THE VAPOR COMPOSITION AND VAPOR-PRESSURE OF ZNSE FROM A MODIFIED KNUDSEN TECHNIQUE BETWEEN 1190 AND 1310 K
Authors: SCHONHERR E FREIBERG M SICHE D HARTMANN H
Citation: E. Schonherr et al., THE VAPOR COMPOSITION AND VAPOR-PRESSURE OF ZNSE FROM A MODIFIED KNUDSEN TECHNIQUE BETWEEN 1190 AND 1310 K, Berichte der Bunsengesellschaft fur Physikalische Chemie, 100(11), 1996, pp. 1766-1771
ZNSE SINGLE-CRYSTAL GROWTH BY THE METHOD OF DISSOCIATIVE SUBLIMATION
Authors: HARTMANN H SICHE D
Citation: H. Hartmann et D. Siche, ZNSE SINGLE-CRYSTAL GROWTH BY THE METHOD OF DISSOCIATIVE SUBLIMATION, Journal of crystal growth, 138(1-4), 1994, pp. 260-265
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