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Results:
1-12
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Results: 12
Authors:
SIEBKE F
YATA S
HISHIKAWA Y
TANAKA M
Citation: F. Siebke et al., CORRELATION BETWEEN STRUCTURE AND OPTOELECTRONIC PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON, JPN J A P 1, 37(4A), 1998, pp. 1730-1735
Authors:
SIEBKE F
YATA S
HISHIKAWA Y
TANAKA M
Citation: F. Siebke et al., CORRELATION BETWEEN STRUCTURE AND OPTOELECTRONIC PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON, Journal of non-crystalline solids, 230, 1998, pp. 977-981
Authors:
HERION J
SZOT K
ROSS C
SIEBKE F
Citation: J. Herion et al., TOWARDS A BETTER UNDERSTANDING OF SURFACES OF HYDROGENATED AMORPHOUS-SILICON - INVESTIGATION BY STM AND AFM, Journal of non-crystalline solids, 230, 1998, pp. 78-82
Authors:
CARIUS R
STIEBIG H
SIEBKE F
FOLSCH J
Citation: R. Carius et al., DEFECT DISTRIBUTIONS IN A-SIXGE1-X-H, Journal of non-crystalline solids, 230, 1998, pp. 432-436
Authors:
BOHMER E
SIEBKE F
WAGNER H
Citation: E. Bohmer et al., NEW INSIGHTS INTO THE ZNO A-SIC-H(B) INTERFACE USING XPS ANALYSIS/, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 210-213
Authors:
HERION J
SZOT K
BARZEN S
SIEBKE F
TESKE M
Citation: J. Herion et al., AFM AND STM INVESTIGATIONS OF HYDROGENATED AMORPHOUS-SILICON - TOPOGRAPHY AND BARRIER HEIGHTS, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 338-340
Authors:
SIEBKE F
STIEBIG H
CARIUS R
Citation: F. Siebke et al., MORE INSIGHTS FROM CPM AND PDS - CHARGED AND NEUTRAL DEFECTS IN A-SI-H, Solar energy materials and solar cells, 49(1-4), 1997, pp. 7-12
Authors:
STIEBIG H
SIEBKE F
BEYER W
BENEKING C
RECH B
WAGNER H
Citation: H. Stiebig et al., INTERFACES IN A-SI-H SOLAR-CELL STRUCTURES, Solar energy materials and solar cells, 48(1-4), 1997, pp. 351-363
Authors:
KUBON M
BOEHMER E
SIEBKE F
RECH B
BENEKING C
WAGNER H
Citation: M. Kubon et al., SOLUTION OF THE ZNO P CONTACT PROBLEM IN A-SI-H SOLAR-CELLS/, Solar energy materials and solar cells, 41-2, 1996, pp. 485-492
Authors:
SIEBKE F
STIEBIG H
ABOARAIS A
WAGER H
Citation: F. Siebke et al., CHARGED AND NEUTRAL DEFECT STATES IN A-SI-H DETERMINED FROM IMPROVED ANALYSIS OF THE CONSTANT PHOTOCURRENT METHOD, Solar energy materials and solar cells, 41-2, 1996, pp. 529-536
Authors:
SIEBKE F
STIEBIG H
Citation: F. Siebke et H. Stiebig, STABLE AND METASTABLE DEFECT DISTRIBUTIONS IN UNDOPED AND DOPED A-SI-H OBTAINED FROM ANALYSIS OF THE CONSTANT PHOTOCURRENT METHOD, Journal of non-crystalline solids, 200, 1996, pp. 351-354
Authors:
STIEBIG H
SIEBKE F
Citation: H. Stiebig et F. Siebke, IMPROVED ANALYSIS OF THE CONSTANT PHOTOCURRENT METHOD, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 72(5), 1995, pp. 489-504
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1-12
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