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Results:
1-14
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Results: 14
Authors:
SIEG RM
RINGEL SA
TING SM
SAMAVEDAM SB
CURRIE M
LANGDO T
FITZGERALD EA
Citation: Rm. Sieg et al., TOWARD DEVICE-QUALITY GAAS GROWTH BY MOLECULAR-BEAM EPITAXY ON OFFCUTGE SI1-XGEX/SI SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1471-1474
Authors:
XU Q
HSU JWP
TING SM
FITZGERALD EA
SIEG RM
RINGEL SA
Citation: Q. Xu et al., SCANNING FORCE MICROSCOPY STUDIES OF GAAS FILMS GROWN ON OFFCUT GE SUBSTRATES, Journal of electronic materials, 27(9), 1998, pp. 1010-1016
Authors:
SIEG RM
RINGEL SA
TING SM
FITZGERALD EA
SACKS RN
Citation: Rm. Sieg et al., ANTIPHASE DOMAIN-FREE GROWTH OF GAAS ON OFFCUT (001)GE WAFERS BY MOLECULAR-BEAM EPITAXY WITH SUPPRESSED GE OUTDIFFUSION, Journal of electronic materials, 27(7), 1998, pp. 900-907
Authors:
TING SM
FITZGERALD EA
SIEG RM
RINGEL SA
Citation: Sm. Ting et al., RANGE OF DEFECT MORPHOLOGIES ON GAAS GROWN ON OFFCUT (001)GE SUBSTRATES, Journal of electronic materials, 27(5), 1998, pp. 451-461
Authors:
SIEG RM
CARLIN JA
BOECKL JJ
RINGEL SA
CURRIE MT
TING SM
LANGDO TA
TARASCHI G
FITZGERALD EA
KEYES BM
Citation: Rm. Sieg et al., HIGH MINORITY-CARRIER LIFETIMES IN GAAS GROWN ON LOW-DEFECT-DENSITY GE GESI/SI SUBSTRATES/, Applied physics letters, 73(21), 1998, pp. 3111-3113
Authors:
SIEG RM
SACKS RN
RINGEL SA
Citation: Rm. Sieg et al., APPLICATION OF PYROMETRIC INTERFEROMETRY TO THE IN-SITU MONITORING OFIN0.52AL0.48AS, IN0.53GA0.47AS, AND QUATERNARY ALLOY GROWTH ON INP SUBSTRATES (VOL 175, PG 256, 1997), Journal of crystal growth, 181(4), 1997, pp. 461-461
Authors:
SIEG RM
SACKS RN
RINGEL SA
Citation: Rm. Sieg et al., APPLICATION OF PYROMETRIC INTERFEROMETRY TO THE IN-SITU MONITORING OFIN0.52AL0.48AS, IN0.53GA0.47AS, AND QUATERNARY ALLOY GROWTH ON INP SUBSTRATES, Journal of crystal growth, 175, 1997, pp. 256-261
Authors:
SACKS RN
SIEG RM
RINGEL SA
Citation: Rn. Sacks et al., INVESTIGATION OF THE ACCURACY OF PYROMETRIC INTERFEROMETRY IN DETERMINING ALXGA1-XAS GROWTH-RATES AND COMPOSITIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2157-2162
Authors:
SIEG RM
SACKS RN
GRILLOT PN
RINGEL SA
Citation: Rm. Sieg et al., IMPROVED SUBSTRATE-TEMPERATURE STABILITY DURING MOLECULAR-BEAM EPITAXY GROWTH USING INDIUM FREE MOUNTING OF SMALL SUBSTRATES OF VARIOUS SHAPES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3283-3287
Authors:
SIEG RM
RINGEL SA
Citation: Rm. Sieg et Sa. Ringel, REABSORPTION, BAND-GAP NARROWING, AND THE RECONCILIATION OF PHOTOLUMINESCENCE SPECTRA WITH ELECTRICAL MEASUREMENTS FOR EPITAXIAL N-INP, Journal of applied physics, 80(1), 1996, pp. 448-458
Authors:
SIEG RM
CHATTERJEE B
RINGEL SA
Citation: Rm. Sieg et al., EVIDENCE FOR ENHANCED ZINC INTERSTITIAL CONCENTRATION IN STRAIN-RELAXED HETEROEPITAXIAL INDIUM-PHOSPHIDE, Applied physics letters, 66(23), 1995, pp. 3108-3110
Authors:
SIEG RM
ALTEROVITZ SA
CROKE ET
HARRELL MJ
TANNER M
WANG KL
MENA RA
YOUNG PG
Citation: Rm. Sieg et al., CHARACTERIZATION OF SIXGE1-X SI HETEROSTRUCTURES FOR DEVICE APPLICATIONS USING SPECTROSCOPIC ELLIPSOMETRY/, Journal of applied physics, 74(1), 1993, pp. 586-595
Authors:
SIEG RM
ALTEROVITZ SA
WARNER JD
Citation: Rm. Sieg et al., ELLIPSOMETRIC STUDY OF AMBIENT-PRODUCED OVERLAYER GROWTH-RATE ON YBA2CU3O7-X FILMS, Journal of applied physics, 73(9), 1993, pp. 4357-4361
Authors:
ALTEROVITZ SA
SIEG RM
PAMULAPATI J
BHATTACHARYA PK
Citation: Sa. Alterovitz et al., ELLIPSOMETRIC CHARACTERIZATION OF IN0.52AL0.48AS AND OF MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES ON INP SUBSTRATES (VOL 62, PG 1411, 1993), Applied physics letters, 63(1), 1993, pp. 121-121
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1-14
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