AAAAAA
Results:
1-16
|
Results: 16
Authors:
RIED K
SCHNELL M
SCHATZ F
HIRSCHER M
LUDESCHER B
SIGLE W
KRONMULLER H
Citation: K. Ried et al., CRYSTALLIZATION BEHAVIOR AND MAGNETIC-PROPERTIES OF MAGNETOSTRICTIVE TBDYFE FILMS, Physica status solidi. a, Applied research, 167(1), 1998, pp. 195-208
Authors:
GRIGULL S
JACOB W
HENKE D
SPAETH C
SUMMCHEN L
SIGLE W
Citation: S. Grigull et al., TRANSPORT AND STRUCTURAL MODIFICATION DURING NITROGEN IMPLANTATION OFHARD AMORPHOUS-CARBON FILMS, Journal of applied physics, 83(10), 1998, pp. 5185-5194
Authors:
SIGLE W
REDLICH P
Citation: W. Sigle et P. Redlich, POINT-DEFECT CONCENTRATION DEVELOPMENT IN ELECTRON-IRRADIATED BUCKY ONIONS, Philosophical magazine letters, 76(3), 1997, pp. 125-132
Authors:
SIGLE W
STOCKLE D
Citation: W. Sigle et D. Stockle, STUDIES ON DISLOCATION CORE STRUCTURES US ING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY (HRTEM) AS MOLECULAR-DYNAMICS, European journal of cell biology, 74, 1997, pp. 79-79
Authors:
BARTH KL
SIGLE W
STOCKLE D
ULMER J
LUNK A
Citation: Kl. Barth et al., DEPOSITION OF CUBIC BORON-NITRIDE LAYERS - CHARACTERIZATION OF SUBSTRATE-LAYER INTERFACE, Thin solid films, 301(1-2), 1997, pp. 65-70
Authors:
NIWASE K
SIGLE W
PHILLIPP F
SEEGER A
Citation: K. Niwase et al., GENERATION OF NANOSIZED GROOVES AND HOLES ON METAL-SURFACES BY LOW-TEMPERATURE ELECTRON-IRRADIATION, Philosophical magazine letters, 74(3), 1996, pp. 167-174
Authors:
SIGLE W
Citation: W. Sigle, FOCUSED HIGH-VOLTAGE ELECTRON-BEAMS IN MATERIAL SCIENCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 88-92
Authors:
STRAUB WM
GESSMANN T
SIGLE W
PHILLIPP F
SEEGER A
SCHAEFER HE
Citation: Wm. Straub et al., HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDY OF NANOSTRUCTURED METALS, Nanostructured materials, 6(5-8), 1995, pp. 571-576
Authors:
HAUSLER K
EBERL K
SIGLE W
Citation: K. Hausler et al., PROPERTIES OF GRADED HAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.5GA1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 10(2), 1995, pp. 167-171
Authors:
NUCHTER W
SIGLE W
Citation: W. Nuchter et W. Sigle, ELECTRON CHANNELING - A METHOD IN REAL-SPACE CRYSTALLOGRAPHY AND A COMPARISON WITH THE ATOMIC LOCATION BY CHANNELING-ENHANCED MICROANALYSIS, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 71(1), 1995, pp. 165-186
Authors:
WEILER B
SIGLE W
SEEGER A
Citation: B. Weiler et al., HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF 60-DEGREES-DISLOCATIONS IN CU, Physica status solidi. a, Applied research, 150(1), 1995, pp. 221-225
Authors:
PAN XQ
SIGLE W
PHILLIPP F
SEEGER A
Citation: Xq. Pan et al., A NEW PHASE IN THE INTERMETALLIC AU-CU SYSTEM, Philosophical magazine letters, 70(4), 1994, pp. 203-209
Authors:
NUCHTER W
SIGLE W
Citation: W. Nuchter et W. Sigle, THE STRUCTURE OF DECAGONAL AL-CU-CO-SI - AN ELECTRON CHANNELING STUDY, Philosophical magazine letters, 70(3), 1994, pp. 103-109
Authors:
EBERL K
HAUSLER K
SHITARA T
KERSHAW Y
SIGLE W
Citation: K. Eberl et al., STRAIN RELAXATION IN GRADED INGAAS AND INP BUFFER LAYERS ON GAAS(001), Scanning microscopy, 8(4), 1994, pp. 897-904
Authors:
SIGLE W
SEEGER A
Citation: W. Sigle et A. Seeger, TEMPERATURE-DEPENDENCE OF THE THRESHOLD ENERGY FOR ATOM DISPLACEMENTSIN CU, Physica status solidi. a, Applied research, 146(1), 1994, pp. 57-69
Authors:
SIGLE W
Citation: W. Sigle, STRUCTURE REFINEMENT OF QUASI-CRYSTALLINE AL62CU20CO15SI3 BY ELECTRONCHANNELING, Philosophical magazine letters, 68(1), 1993, pp. 39-43
Risultati:
1-16
|