Authors:
KAUKONEN M
SITCH PK
JUNGNICKEL G
NIEMINEN RM
POYKKO S
POREZAG D
FRAUENHEIM T
Citation: M. Kaukonen et al., EFFECT OF N AND B DOPING ON THE GROWTH OF CVD DIAMOND (100)-H(2X1) SURFACES, Physical review. B, Condensed matter, 57(16), 1998, pp. 9965-9970
Authors:
SITCH PK
JUNGNICKEL G
KAUKONEN M
POREZAG D
FRAUENHEIM T
PEDERSON MR
JACKSON KA
Citation: Pk. Sitch et al., A STUDY OF SUBSTITUTIONAL NITROGEN IMPURITIES IN CHEMICAL-VAPOR-DEPOSITED DIAMOND, Journal of applied physics, 83(9), 1998, pp. 4642-4646
Citation: Pk. Sitch et al., AN AB-INITIO STUDY OF THE 90-DEGREES PARTIAL DISLOCATION CORE IN DIAMOND, Journal de physique. III, 7(7), 1997, pp. 1381-1387
Citation: Pk. Sitch et al., A DENSITY-FUNCTIONAL TIGHT-BINDING APPROACH FOR MODELING GE AND GEH STRUCTURES, Journal of physics. Condensed matter, 8(37), 1996, pp. 6873-6888
Authors:
SITCH PK
KOHLER T
JUNGNICKEL G
POREZAG D
FRAUENHEIM T
Citation: Pk. Sitch et al., A THEORETICAL-STUDY OF BORON AND NITROGEN DOPING IN TETRAHEDRAL AMORPHOUS-CARBON, Solid state communications, 100(8), 1996, pp. 549-553
Citation: Pk. Sitch et al., AB-INITIO INVESTIGATION OF THE DISLOCATION-STRUCTURE AND ACTIVATION-ENERGY FOR DISLOCATION-MOTION IN SILICON-CARBIDE, Physical review. B, Condensed matter, 52(7), 1995, pp. 4951-4955
Citation: S. Oberg et al., FIRST-PRINCIPLES CALCULATIONS OF THE ENERGY BARRIER TO DISLOCATION-MOTION IN SI AND GAAS, Physical review. B, Condensed matter, 51(19), 1995, pp. 13138-13145