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Results: 1-7 |
Results: 7
DIRECT COMPARISON OF 2-DIMENSIONAL DOPANT PROFILES BY SCANNING CAPACITANCE MICROSCOPY WITH TSUPREM4 PROCESS SIMULATION
Authors: MCMURRAY JS KIM J WILLIAMS CC SLINKMAN J
Citation: Js. Mcmurray et al., DIRECT COMPARISON OF 2-DIMENSIONAL DOPANT PROFILES BY SCANNING CAPACITANCE MICROSCOPY WITH TSUPREM4 PROCESS SIMULATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 344-348
2-STEP DOPANT DIFFUSION STUDY PERFORMED IN 2 DIMENSIONS BY SCANNING CAPACITANCE MICROSCOPY AND TSUPREM IV
Authors: KIM J MCMURRAY JS WILLIAMS CC SLINKMAN J
Citation: J. Kim et al., 2-STEP DOPANT DIFFUSION STUDY PERFORMED IN 2 DIMENSIONS BY SCANNING CAPACITANCE MICROSCOPY AND TSUPREM IV, Journal of applied physics, 84(3), 1998, pp. 1305-1309
IMAGING INTEGRATED-CIRCUIT DOPANT PROFILES WITH THE FORCE-BASED SCANNING KELVIN PROBE MICROSCOPE
Authors: HOCHWITZ T HENNING AK LEVEY C DAGHLIAN C SLINKMAN J NEVER J KASZUBA P GLUCK R WELLS R PEKARIK J FINCH R
Citation: T. Hochwitz et al., IMAGING INTEGRATED-CIRCUIT DOPANT PROFILES WITH THE FORCE-BASED SCANNING KELVIN PROBE MICROSCOPE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 440-446
CAPACITIVE EFFECTS ON QUANTITATIVE DOPANT PROFILING WITH SCANNED ELECTROSTATIC FORCE MICROSCOPES
Authors: HOCHWITZ T HENNING AK LEVEY C DAGHLIAN C SLINKMAN J
Citation: T. Hochwitz et al., CAPACITIVE EFFECTS ON QUANTITATIVE DOPANT PROFILING WITH SCANNED ELECTROSTATIC FORCE MICROSCOPES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 457-462
ANALYSIS OF SNUBBER-CLAMPED DIODE-STRING MIXED VOLTAGE INTERFACE ESD PROTECTION NETWORK FOR ADVANCED MICROPROCESSORS (REPRINTED FROM ELECTRICAL OVERSTRESS ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 1995)
Authors: VOLDMAN SH GEROSA G GROSS VP DICKSON N FURKAY S SLINKMAN J
Citation: Sh. Voldman et al., ANALYSIS OF SNUBBER-CLAMPED DIODE-STRING MIXED VOLTAGE INTERFACE ESD PROTECTION NETWORK FOR ADVANCED MICROPROCESSORS (REPRINTED FROM ELECTRICAL OVERSTRESS ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, 1995), Journal of electrostatics, 38(1-2), 1996, pp. 3-31
2-DIMENSIONAL SURFACE DOPANT PROFILING IN SILICON USING SCANNING KELVIN PROBE MICROSCOPY
Authors: HENNING AK HOCHWITZ T SLINKMAN J NEVER J HOFFMANN S KASZUBA P DAGHLIAN C
Citation: Ak. Henning et al., 2-DIMENSIONAL SURFACE DOPANT PROFILING IN SILICON USING SCANNING KELVIN PROBE MICROSCOPY, Journal of applied physics, 77(5), 1995, pp. 1888-1896
QUANTITATIVE 2-DIMENSIONAL DOPANT PROFILE MEASUREMENT AND INVERSE MODELING BY SCANNING CAPACITANCE MICROSCOPY
Authors: HUANG Y WILLIAMS CC SLINKMAN J
Citation: Y. Huang et al., QUANTITATIVE 2-DIMENSIONAL DOPANT PROFILE MEASUREMENT AND INVERSE MODELING BY SCANNING CAPACITANCE MICROSCOPY, Applied physics letters, 66(3), 1995, pp. 344-346
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