Authors: TERPSTRA D DEBOER WB SLOTBOOM JW

Citation: D. Terpstra et al., HIGH-PERFORMANCE SI-SIGE HBTS SIGE-TECHNOLOGY DEVELOPMENT IN ESPRIT-PROJECT-8001 TIBIA - AN OVERVIEW, Solid-state electronics, 41(10), 1997, pp. 1493-1502

Authors: HUETING RJE SLOTBOOM JW PRUIJMBOOM A DEBOER WB TIMMERING CE COWERN NEB

Citation: Rje. Hueting et al., ON THE OPTIMIZATION OF SIGE-BASE BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1518-1524

Authors: VANDORT MJ SLOTBOOM JW STREUTKER G WOERLEE PH

Citation: Mj. Vandort et al., LIFETIME CALCULATIONS OF MOSFETS USING DEPTH-DEPENDENT NONLOCAL IMPACT IONIZATION, Microelectronics, 26(2-3), 1995, pp. 301-305

Authors: ROKS E CENTEN PG SANKARANARAYANAN L SLOTBOOM JW BOSIERS JT HUININK WF

Citation: E. Roks et al., BIPOLAR FLOATING-BASE CHARGE DETECTOR USED AS CCD OUTPUT STRUCTURE, Philips journal of research, 48(3), 1994, pp. 261-269

Authors: VANDORT MJ LIFKA H ZALM PC DEBOER WB WOERLEE PH SLOTBOOM JW COWERN NEB

Citation: Mj. Vandort et al., NEW TECHNIQUE FOR MEASURING 2-DIMENSIONAL OXIDATION-ENHANCED DIFFUSION IN SILICON AT LOW-TEMPERATURES, Applied physics letters, 64(16), 1994, pp. 2130-2132

Authors: HURKX F PEEK HL SLOTBOOM JW WINDGASSEN RA

Citation: F. Hurkx et al., ANOMALOUS BEHAVIOR OF SURFACE LEAKAGE CURRENTS IN HEAVILY-DOPED GATED-DIODES, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2273-2281