Authors: ANDREEV AN STRELCHUK AM SAVKINA NS SNEGOV FM CHELNOKOV VE

Citation: An. Andreev et al., STUDY OF SIC-6H DINISTOR STRUCTURES, Semiconductors, 29(6), 1995, pp. 561-565

Authors: ANDREEV AN LEBEDEV AA RASTEGAEVA MG SNEGOV FM SYRKIN AL CHELNOKOV VE SHESTOPALOVA LN

Citation: An. Andreev et al., BARRIER HEIGHT IN N-SIC-6H BASED SCHOTTKY DIODES, Semiconductors, 29(10), 1995, pp. 957-962

Authors: ANDREEV AN STRELCHUK AM SAVKINA NS SNEGOV FM CHELNOKOV VE

Citation: An. Andreev et al., HIGH-TEMPERATURE 6H-SIC DINISTOR, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 194-197

Authors: ANDREEV AN SNEGOV FM STRELCHUK AM CHELNOKOV VE

Citation: An. Andreev et al., SILICON-CARBIDE THYRISTORS - CERTAIN FEATURES OF THE DEVICES AND ESTIMATE OF THEIR POSSIBLE PARAMETERS, Semiconductors, 28(7), 1994, pp. 730-732