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Results: 1-12 |
Results: 12
GROWTH OF SIO2 AT ROOM-TEMPERATURE WITH THE USE OF CATALYZED SEQUENTIAL HALF-REACTIONS
Authors: KLAUS JW SNEH O GEORGE SM
Citation: Jw. Klaus et al., GROWTH OF SIO2 AT ROOM-TEMPERATURE WITH THE USE OF CATALYZED SEQUENTIAL HALF-REACTIONS, Science, 278(5345), 1997, pp. 1934-1936
REACTION-KINETICS OF H2O WITH CHLORINATED SI(111)-(7X7) AND POROUS SILICON SURFACES
Authors: WISE ML SNEH O OKADA LA GEORGE SM
Citation: Ml. Wise et al., REACTION-KINETICS OF H2O WITH CHLORINATED SI(111)-(7X7) AND POROUS SILICON SURFACES, Surface science, 364(3), 1996, pp. 367-379
ADSORPTION AND DESORPTION-KINETICS OF H2O ON A FULLY HYDROXYLATED SIO2 SURFACE
Authors: SNEH O CAMERON MA GEORGE SM
Citation: O. Sneh et al., ADSORPTION AND DESORPTION-KINETICS OF H2O ON A FULLY HYDROXYLATED SIO2 SURFACE, Surface science, 364(1), 1996, pp. 61-78
ADSORPTION AND DECOMPOSITION OF DIETHYLDIETHOXYSILANE ON SILICON SURFACES - NEW POSSIBILITIES FOR SIO2 DEPOSITION
Authors: WISE ML SNEH O OKADA LA GEORGE SM
Citation: Ml. Wise et al., ADSORPTION AND DECOMPOSITION OF DIETHYLDIETHOXYSILANE ON SILICON SURFACES - NEW POSSIBILITIES FOR SIO2 DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 865-875
H2O ADSORPTION-KINETICS ON SI(111)7X7 AND SI(111)7X7 MODIFIED BY LASER ANNEALING
Authors: WISE ML OKADA LA SNEH O GEORGE SM
Citation: Ml. Wise et al., H2O ADSORPTION-KINETICS ON SI(111)7X7 AND SI(111)7X7 MODIFIED BY LASER ANNEALING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 1853-1860
SAMPLE MANIPULATOR EMPLOYING A GAS-THERMAL SWITCH DESIGNED FOR HIGH-PRESSURE EXPERIMENTS IN AN ULTRAHIGH-VACUUM APPARATUS
Authors: SNEH O GEORGE SM
Citation: O. Sneh et Sm. George, SAMPLE MANIPULATOR EMPLOYING A GAS-THERMAL SWITCH DESIGNED FOR HIGH-PRESSURE EXPERIMENTS IN AN ULTRAHIGH-VACUUM APPARATUS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(2), 1995, pp. 493-496
ATOMIC LAYER GROWTH OF SIO2 ON SI(100) USING SICL4 AND H2O IN A BINARY REACTION SEQUENCE
Authors: SNEH O WISE ML OTT AW OKADA LA GEORGE SM
Citation: O. Sneh et al., ATOMIC LAYER GROWTH OF SIO2 ON SI(100) USING SICL4 AND H2O IN A BINARY REACTION SEQUENCE, Surface science, 334(1-3), 1995, pp. 135-152
THERMAL-STABILITY OF HYDROXYL-GROUPS ON A WELL-DEFINED SILICA SURFACE
Authors: SNEH O GEORGE SM
Citation: O. Sneh et Sm. George, THERMAL-STABILITY OF HYDROXYL-GROUPS ON A WELL-DEFINED SILICA SURFACE, Journal of physical chemistry, 99(13), 1995, pp. 4639-4647
ATOMIC LAYER CONTROLLED DEPOSITION OF SIO2 AND AL2O3 USING ABAB - BINARY REACTION SEQUENCE CHEMISTRY
Authors: GEORGE SM SNEH O DILLON AC WISE ML OTT AW OKADA LA WAY JD
Citation: Sm. George et al., ATOMIC LAYER CONTROLLED DEPOSITION OF SIO2 AND AL2O3 USING ABAB - BINARY REACTION SEQUENCE CHEMISTRY, Applied surface science, 82-3, 1994, pp. 460-467
HIGH-RESOLUTION INFRARED OVERTONE SPECTROSCOPY OF N-2-HF - VIBRATIONAL RED SHIFTS AND PREDISSOCIATION RATE AS A FUNCTION OF HF STRETCHING QUANTA
Authors: FARRELL JT SNEH O NESBITT DJ
Citation: Jt. Farrell et al., HIGH-RESOLUTION INFRARED OVERTONE SPECTROSCOPY OF N-2-HF - VIBRATIONAL RED SHIFTS AND PREDISSOCIATION RATE AS A FUNCTION OF HF STRETCHING QUANTA, Journal of physical chemistry, 98(24), 1994, pp. 6068-6074
XENON DIFFUSION ON A STEPPED PT(11,11,9) SURFACE
Authors: SNEH O GEORGE SM
Citation: O. Sneh et Sm. George, XENON DIFFUSION ON A STEPPED PT(11,11,9) SURFACE, The Journal of chemical physics, 101(4), 1994, pp. 3287-3297
MOLECULAR LIGHT-EMISSION INDUCED BY INELASTIC ELECTRON-TUNNELING
Authors: FLAXER E SNEH O CHESNOVSKY O
Citation: E. Flaxer et al., MOLECULAR LIGHT-EMISSION INDUCED BY INELASTIC ELECTRON-TUNNELING, Science, 262(5142), 1993, pp. 2012-2014
Risultati: 1-12 |