Authors: CAI D SNELL CM BEARDMORE KM GRONBECHJENSEN N

Citation: D. Cai et al., SIMULATION OF PHOSPHORUS IMPLANTATION INTO SILICON WITH A SINGLE-PARAMETER ELECTRONIC STOPPING POWER MODEL, International journal of modern physics C, 9(3), 1998, pp. 459-470

Authors: TIAN SY MORRIS MF MORRIS SJ OBRADOVIC B WANG G TASCH AF SNELL CM

Citation: Sy. Tian et al., A DETAILED PHYSICAL MODEL FOR ION IMPLANT INDUCED DAMAGE IN SILICON, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1226-1238

Authors: GRAY MG BOOTH TE KWAN TJT SNELL CM

Citation: Mg. Gray et al., A MULTICOMB VARIANCE REDUCTION SCHEME FOR MONTE-CARLO SEMICONDUCTOR SIMULATORS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 918-924

Authors: CAI D GRONBECHJENSEN N SNELL CM BEARDMORE KM

Citation: D. Cai et al., PHENOMENOLOGICAL ELECTRONIC STOPPING-POWER MODEL FOR MOLECULAR-DYNAMICS AND MONTE-CARLO SIMULATION OF ION-IMPLANTATION INTO SILICON, Physical review. B, Condensed matter, 54(23), 1996, pp. 17147-17157

Authors: YANG SH SNELL CM MORRIS SJ TIAN S PARAB K OBRADOVICH B MORRIS M TASCH AF

Citation: Sh. Yang et al., A MONTE-CARLO BINARY COLLISION MODEL FOR BF2 IMPLANTS INTO (100) SINGLE-CRYSTAL SILICON, Journal of the Electrochemical Society, 143(11), 1996, pp. 3784-3790

Authors: SNELL CM PERATT AL

Citation: Cm. Snell et Al. Peratt, ROTATION VELOCITY AND NEUTRAL HYDROGEN DISTRIBUTION DEPENDENCY ON MAGNETIC-FIELD STRENGTH IN SPIRAL GALAXIES, Astrophysics and space science, 227(1-2), 1995, pp. 167-173