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Results:
1-11
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Results: 11
Authors:
SOMOGYI K
Citation: K. Somogyi, SOME CRITICAL CONDITIONS OF THE THERMAL BREAKDOWN IN SEMICONDUCTORS, Sensors and actuators. A, Physical, 71(1-2), 1998, pp. 58-62
Authors:
ROBERT C
BIDEUX L
GRUZZA B
LOHNER T
FRIED M
BARNA A
SOMOGYI K
GERGELY G
Citation: C. Robert et al., ELLIPSOMETRY OF AL2O3 THIN-FILMS DEPOSITED ON SI AND INP, Semiconductor science and technology, 12(11), 1997, pp. 1429-1432
Authors:
PODOR B
CSONTOS L
SOMOGYI K
VIGNAUD D
Citation: B. Podor et al., PHOTOLUMINESCENCE AND DOUBLE-CRYSTAL X-RAY STUDY OF INGAAS INP - EFFECT OF RARE-EARTH (DYSPROSIUM) ADDITION DURING LIQUID-PHASE EPITAXIAL-GROWTH/, Acta Physica Polonica. A, 87(2), 1995, pp. 465-468
Authors:
SOMOGYI K
SAFRAN G
Citation: K. Somogyi et G. Safran, MOBILITY VARIATIONS IN SEMICONDUCTING AG2SE LAYERS, Vacuum, 46(8-10), 1995, pp. 1055-1058
Authors:
SOMOGYI K
SAFRAN G
Citation: K. Somogyi et G. Safran, HYSTERESIS OF THE PHASE-TRANSFORMATION DETECTED BY GALVANOMAGNETIC MEASUREMENTS OF AG2SE LAYERS, Journal of applied physics, 78(11), 1995, pp. 6855-6857
Authors:
THEYS B
MACHAYEKHI B
CHEVALLIER J
SOMOGYI K
ZAHRAMAN K
GIBART P
MILOCHE M
Citation: B. Theys et al., INTERACTIONS BETWEEN HYDROGEN AND GROUP-VI DONORS IN GAAS AND GAALAS, Journal of applied physics, 77(7), 1995, pp. 3186-3193
Authors:
SOMOGYI K
Citation: K. Somogyi, UNTITLED - COMMENT, Solid-state electronics, 37(7), 1994, pp. 1460-1460
Authors:
RAHBI R
THEYS B
JONES R
PAJOT B
OBERG S
SOMOGYI K
FILLE ML
CHEVALLIER J
Citation: R. Rahbi et al., NEUTRALIZATION OF GROUP VI DONORS BY HYDROGEN IN GALLIUM-ARSENIDE, Solid state communications, 91(3), 1994, pp. 187-190
Authors:
KOURKOUTAS CD
KOVACS B
EUTHYMIOU PC
SZENTPALI B
SOMOGYI K
GIAKOUMAKIS GE
Citation: Cd. Kourkoutas et al., A STUDY OF THE PROFILE OF THE E3 ELECTRON TRAP IN GAAS, Solid state communications, 89(1), 1994, pp. 45-49
Authors:
SOMOGYI K
Citation: K. Somogyi, ANGLE-DEPENDENT MAGNETORESISTANCE MEASUREMENTS ON EPITAXIAL GAAS-LAYERS GROWN ON CONDUCTIVE SUBSTRATES, Semiconductor science and technology, 8(10), 1993, pp. 1834-1841
Authors:
SOMOGYI K
Citation: K. Somogyi, MEASUREMENT OF THE RESISTANCE OF METAL-SEMICONDUCTOR-METAL STRUCTURESUSING THE GEOMETRICAL MAGNETORESISTANCE TECHNIQUE - COMMENTS, Solid-state electronics, 36(11), 1993, pp. 1651-1651
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