Authors: AHN BJ SONE JH KIM JW CHOI IH KIM DM

Citation: Bj. Ahn et al., A SIMPLE AND EFFICIENT SELF-LIMITING ERASE SCHEME FOR HIGH-PERFORMANCE SPLIT-GATE FLASH MEMORY CELLS, IEEE electron device letters, 19(11), 1998, pp. 438-440

Authors: KIM K SONE JH KIM SO PARK JS KIM HJ

Citation: K. Kim et al., DEPOSITION MECHANISM AND ELECTRICAL-PROPERTIES OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED W AS A GATE ELECTRODE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 919-923

Authors: SONE JH KIM SO KIM KJ KIM HS KIM HJ

Citation: Jh. Sone et al., FORMATION OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED W-THIN-FILM ON SILICON DIOXIDE FOR GATE ELECTRODE APPLICATION, Thin solid films, 253(1-2), 1994, pp. 377-381

Authors: KIM SO KIM KJ KIM HS KANG SB SONE JH BYUN JS KIM HJ

Citation: So. Kim et al., ELECTRICAL-PROPERTIES OF THE P(-GATE ELECTRODE OF AN A-SI())POLY-SI DOUBLE-LAYER/, Thin solid films, 253(1-2), 1994, pp. 413-418