AAAAAA

   
Results: 1-16 |
Results: 16
ELECTRICAL CHARACTERIZATION OF SI1-XGEX P-METAL-OXIDE-SEMICONDUCTOR CHANNEL BY ADMITTANCE SPECTROSCOPY
Authors: ALIEU J SOUIFI A BREMOND G BOUILLON P SKOTNICKI T
Citation: J. Alieu et al., ELECTRICAL CHARACTERIZATION OF SI1-XGEX P-METAL-OXIDE-SEMICONDUCTOR CHANNEL BY ADMITTANCE SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1675-1678
INVESTIGATION OF PROCESS-INDUCED DEFECTS IN SIGE SI HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: SOUIFI A DEBARROS O BREMOND G LETRON B MOUIS M VINCENT G ASHBURN P
Citation: A. Souifi et al., INVESTIGATION OF PROCESS-INDUCED DEFECTS IN SIGE SI HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1745-1749
NEW ASPECTS AND MECHANISM OF KINK EFFECT IN INALAS INGAAS/INP INVERTED HFETS/
Authors: GEORGESCU B PY MA SOUIFI A POST G GUILLOT G
Citation: B. Georgescu et al., NEW ASPECTS AND MECHANISM OF KINK EFFECT IN INALAS INGAAS/INP INVERTED HFETS/, IEEE electron device letters, 19(5), 1998, pp. 154-156
SI1-XGEX SI VALENCE-BAND OFFSET DETERMINATION USING CURRENT-VOLTAGE CHARACTERISTICS/
Authors: CHRETIEN O APETZ R SOUIFI A VESCAN L
Citation: O. Chretien et al., SI1-XGEX SI VALENCE-BAND OFFSET DETERMINATION USING CURRENT-VOLTAGE CHARACTERISTICS/, Thin solid films, 294(1-2), 1997, pp. 198-200
CHARACTERIZATION OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: DEBARROS O SOUIFI A LETRON B VINCENT G BREMOND G
Citation: O. Debarros et al., CHARACTERIZATION OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Thin solid films, 294(1-2), 1997, pp. 271-273
LATERAL CONFINEMENT BY LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION-BASED SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEXSI NANOSTRUCTURES
Authors: VESCAN L DIEKER C SOUIFI A STOICA T
Citation: L. Vescan et al., LATERAL CONFINEMENT BY LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION-BASED SELECTIVE EPITAXIAL-GROWTH OF SI1-XGEXSI NANOSTRUCTURES, Journal of applied physics, 81(10), 1997, pp. 6709-6715
CHARACTERIZATION OF HIGH-QUALITY RTCVD RELAXED SI1-XGEX GROWN ON GE GRADED BUFFER LAYERS ON SI BY PHOTOLUMINESCENCE SPECTROSCOPY
Authors: BREMOND G SOUIFI A DEBARROS O BENMANSOUR A DUCROQUET F WARREN P DUTARTRE D
Citation: G. Bremond et al., CHARACTERIZATION OF HIGH-QUALITY RTCVD RELAXED SI1-XGEX GROWN ON GE GRADED BUFFER LAYERS ON SI BY PHOTOLUMINESCENCE SPECTROSCOPY, Journal of electronic materials, 25(7), 1996, pp. 1023-1027
CAPTURE, STORAGE, AND EMISSION OF HOLES IN SI SI1-XGEX/SI QWS FOR THEDETERMINATION OF THE VALENCE-BAND OFFSET BY DLTS/
Authors: CHRETIEN O APETZ R VESCAN L SOUIFI A LUTH H
Citation: O. Chretien et al., CAPTURE, STORAGE, AND EMISSION OF HOLES IN SI SI1-XGEX/SI QWS FOR THEDETERMINATION OF THE VALENCE-BAND OFFSET BY DLTS/, Applied surface science, 102, 1996, pp. 237-241
INTENSE PHOTOLUMINESCENCE FROM STRAINED SIGE SUB-100 NM WIRES SELECTIVELY GROWN ON SI BY LPCVD
Authors: SOUIFI A VESCAN L LOO R GARTNER P DIEKER C HARTMANN A LUTH H
Citation: A. Souifi et al., INTENSE PHOTOLUMINESCENCE FROM STRAINED SIGE SUB-100 NM WIRES SELECTIVELY GROWN ON SI BY LPCVD, Applied surface science, 102, 1996, pp. 381-384
DETERMINATION OF VALENCE-BAND OFFSETS FROM SI SI1-XGEX/SI USING TEMPERATURE-DEPENDENT CURRENT-VOLTAGE CHARACTERISTICS/
Authors: CHRETIEN O SOUIFI A APETZ R VESCAN L LUTH H POPESCU C
Citation: O. Chretien et al., DETERMINATION OF VALENCE-BAND OFFSETS FROM SI SI1-XGEX/SI USING TEMPERATURE-DEPENDENT CURRENT-VOLTAGE CHARACTERISTICS/, Journal of applied physics, 79(5), 1996, pp. 2463-2466
STRAINED SI1-XGEX SI DOTS AND WIRES GROWN BY SELECTIVE EPITAXY/
Authors: VESCAN L LOO R SOUIFI A DIEKER C WICKENHAUSER S
Citation: L. Vescan et al., STRAINED SI1-XGEX SI DOTS AND WIRES GROWN BY SELECTIVE EPITAXY/, Journal de physique. IV, 5(C5), 1995, pp. 55-62
STRAINED SI1-XGEX SI DOTS AND WIRES GROWN BY SELECTIVE EPITAXY/
Authors: VESCAN L LOO R SOUIFI A DIEKER C WICKENHAUSER S
Citation: L. Vescan et al., STRAINED SI1-XGEX SI DOTS AND WIRES GROWN BY SELECTIVE EPITAXY/, Journal de physique. IV, 5(C5), 1995, pp. 55-62
PHOTOLUMINESCENCE CHARACTERIZATION OF SI1-XGEX RELAXED PSEUDO-SUBSTRATES GROWN ON SI
Authors: BREMOND G SOUIFI A DEBARROS O BENMANSOUR A WARREN P DUTARTRE D
Citation: G. Bremond et al., PHOTOLUMINESCENCE CHARACTERIZATION OF SI1-XGEX RELAXED PSEUDO-SUBSTRATES GROWN ON SI, Journal of crystal growth, 157(1-4), 1995, pp. 116-120
THERMAL HOLE EMISSION FROM SI SI(1-X)GEX/SI QUANTUM-WELLS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: CHRETIEN O APETZ R VESCAN L SOUIFI A LUTH H SCHMALZ K KOULMANN JJ
Citation: O. Chretien et al., THERMAL HOLE EMISSION FROM SI SI(1-X)GEX/SI QUANTUM-WELLS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of applied physics, 78(9), 1995, pp. 5439-5447
EFFECT OF RAPID THERMAL ANNEALING ON THE PHOTOLUMINESCENCE PROPERTIESOF SIGE SI HETEROSTRUCTURES/
Authors: SOUIFI A BENYATTOU T GUILLOT G BREMOND G DUTARTRE D WARREN P
Citation: A. Souifi et al., EFFECT OF RAPID THERMAL ANNEALING ON THE PHOTOLUMINESCENCE PROPERTIESOF SIGE SI HETEROSTRUCTURES/, Journal of applied physics, 78(6), 1995, pp. 4039-4045
BAND-GAP NARROWING DETERMINATION BY PHOTOLUMINESCENCE ON STRAINED B-DOPED SI0.82GE0.18 LAYERS GROWN ON SI
Authors: SOUIFI A BREMOND G BENYATTOU T GUILLOT G DUTARTRE D WARREN P
Citation: A. Souifi et al., BAND-GAP NARROWING DETERMINATION BY PHOTOLUMINESCENCE ON STRAINED B-DOPED SI0.82GE0.18 LAYERS GROWN ON SI, Applied physics letters, 62(23), 1993, pp. 2986-2988
Risultati: 1-16 |