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Results: 4
ACCURATE DETERMINATION OF THE BAND-OFFSET OF A QUANTUM SEMICONDUCTOR STRUCTURE FROM ITS CAPACITANCE-VOLTAGE PROFILE - APPLICATION TO AN INPGA0.47IN0.53AS/INP SINGLE-QUANTUM-WELL/
Authors: GUILLOT C DUGAY M BARBARIN F SOULIERE V ABRAHAM P MONTEIL Y
Citation: C. Guillot et al., ACCURATE DETERMINATION OF THE BAND-OFFSET OF A QUANTUM SEMICONDUCTOR STRUCTURE FROM ITS CAPACITANCE-VOLTAGE PROFILE - APPLICATION TO AN INPGA0.47IN0.53AS/INP SINGLE-QUANTUM-WELL/, Journal of electronic materials, 26(2), 1997, pp. 6-8
EFFECT OF METHYL SURFACE SATURATION DURING GROWTH INTERRUPTION SEQUENCES OF METALORGANIC VAPOR-PHASE EPITAXY OF IN0.53GA0.47AS USING TRIMETHYLARSENIC
Authors: PAUTET C ABRAHAM P SOULIERE V DAZORD J MONTEIL Y BOUIX J
Citation: C. Pautet et al., EFFECT OF METHYL SURFACE SATURATION DURING GROWTH INTERRUPTION SEQUENCES OF METALORGANIC VAPOR-PHASE EPITAXY OF IN0.53GA0.47AS USING TRIMETHYLARSENIC, Journal of crystal growth, 179(1-2), 1997, pp. 10-17
BEHAVIOR OF VICINAL INP SURFACES GROWN BY MOVPE - EXPLOITATION OF AFMIMAGES
Authors: THEVENOT V SOULIERE V DUMONT H MONTEIL Y BOUIX J REGRENY P DUC TM
Citation: V. Thevenot et al., BEHAVIOR OF VICINAL INP SURFACES GROWN BY MOVPE - EXPLOITATION OF AFMIMAGES, Journal of crystal growth, 170(1-4), 1997, pp. 251-256
MISORIENTATION EFFECT ON THE MONOLAYER TERRACE TOPOGRAPHY OF (100)INPSUBSTRATES ANNEALED UNDER A PH3 H-2 AMBIENT AND HOMOEPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: MERLIN V DUC TM YOUNES G MONTEIL Y SOULIERE V REGRENY P
Citation: V. Merlin et al., MISORIENTATION EFFECT ON THE MONOLAYER TERRACE TOPOGRAPHY OF (100)INPSUBSTRATES ANNEALED UNDER A PH3 H-2 AMBIENT AND HOMOEPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 78(8), 1995, pp. 5048-5052
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