Authors: STACH EA HULL R BEAN JC JONES KS NEJIM A

Citation: Ea. Stach et al., ZIN-SITU STUDIES OF THE INTERACTION OF DISLOCATIONS WITH POINT-DEFECTS DURING ANNEALING OF ION-IMPLANTED SI SIGE/SI(001) HETEROSTRUCTURES/, MICROSCOPY AND MICROANALYSIS, 4(3), 1998, pp. 294-307

Authors: HULL R DEMAREST J DUNN D STACH EA YUAN Q

Citation: R. Hull et al., APPLICATIONS OF ION MICROSCOPY AND IN-SITU ELECTRON-MICROSCOPY TO THESTUDY OF ELECTRONIC MATERIALS AND DEVICES, MICROSCOPY AND MICROANALYSIS, 4(3), 1998, pp. 308-316

Authors: STACH EA HULL R TROMP RM REUTER MC COPEL M LEGOUES FK BEAN JC

Citation: Ea. Stach et al., EFFECT OF THE SURFACE UPON MISFIT DISLOCATION VELOCITIES DURING THE GROWTH AND ANNEALING OF SIGE SI (001) HETEROSTRUCTURES/, Journal of applied physics, 83(4), 1998, pp. 1931-1937

Authors: HULL R STACH EA

Citation: R. Hull et Ea. Stach, EQUILIBRIUM AND METASTABLE STRAINED-LAYER SEMICONDUCTOR HETEROSTRUCTURES, Current opinion in solid state & materials science, 1(1), 1996, pp. 21-28