ACNP - Italian Periodicals Catalogue

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Results: 10

ELECTRON AND HOLE TRAPPING IN THE BURIED OXIDE OF UNIBOND WAFERS

Authors: STAHLBUSH RE

Citation: Re. Stahlbush, ELECTRON AND HOLE TRAPPING IN THE BURIED OXIDE OF UNIBOND WAFERS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2106-2114

ELECTRON TRAPPING IN BURIED OXIDES DURING IRRADIATION AT 40 AND 300 K

Authors: STAHLBUSH RE

Citation: Re. Stahlbush, ELECTRON TRAPPING IN BURIED OXIDES DURING IRRADIATION AT 40 AND 300 K, IEEE transactions on nuclear science, 43(6), 1996, pp. 2627-2634

ANOMALOUS POSITIVE CHARGE FORMATION BY ATOMIC-HYDROGEN EXPOSURE

Authors: STAHLBUSH RE CARTIER E BUCHANAN DA

Citation: Re. Stahlbush et al., ANOMALOUS POSITIVE CHARGE FORMATION BY ATOMIC-HYDROGEN EXPOSURE, Microelectronic engineering, 28(1-4), 1995, pp. 15-18

GENERATION OF THERMALLY-INDUCED DEFECTS IN BURIED SIO2-FILMS

Authors: ZVANUT ME CHEN TL STAHLBUSH RE STEIGENVALT ES BROWN GA

Citation: Me. Zvanut et al., GENERATION OF THERMALLY-INDUCED DEFECTS IN BURIED SIO2-FILMS, Journal of applied physics, 77(9), 1995, pp. 4329-4333

INTERFACE STATES INDUCED BY THE PRESENCE OF TRAPPED HOLES NEAR THE SILICON-SILICON DIOXIDE INTERFACE

Authors: DIMARIA DJ BUCHANAN DA STATHIS JH STAHLBUSH RE

Citation: Dj. Dimaria et al., INTERFACE STATES INDUCED BY THE PRESENCE OF TRAPPED HOLES NEAR THE SILICON-SILICON DIOXIDE INTERFACE, Journal of applied physics, 77(5), 1995, pp. 2032-2040

BULK TRAP FORMATION BY HIGH-TEMPERATURE ANNEALING OF BURIED THERMAL OXIDES

Authors: STAHLBUSH RE BROWN GA

Citation: Re. Stahlbush et Ga. Brown, BULK TRAP FORMATION BY HIGH-TEMPERATURE ANNEALING OF BURIED THERMAL OXIDES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1708-1716

INTERACTION OF HYDROGEN WITH DEFECTS IN A-SIO2

Authors: EDWARDS AH PICKARD JA STAHLBUSH RE

Citation: Ah. Edwards et al., INTERACTION OF HYDROGEN WITH DEFECTS IN A-SIO2, Journal of non-crystalline solids, 179, 1994, pp. 148-161

INTERFACE DEFECT FORMATION IN MOSFETS BY ATOMIC-HYDROGEN EXPOSURE

Authors: STAHLBUSH RE CARTIER E

Citation: Re. Stahlbush et E. Cartier, INTERFACE DEFECT FORMATION IN MOSFETS BY ATOMIC-HYDROGEN EXPOSURE, IEEE transactions on nuclear science, 41(6), 1994, pp. 1844-1853

EFFECTS OF PAST-STRESS HYDROGEN ANNEALING ON MOS OXIDES AFTER CO-60 IRRADIATION OR FOWLER-NORDHEIM INJECTION

Authors: SAKS NS KLEIN RB STAHLBUSH RE MRSTIK BJ RENDELL RW

Citation: Ns. Saks et al., EFFECTS OF PAST-STRESS HYDROGEN ANNEALING ON MOS OXIDES AFTER CO-60 IRRADIATION OR FOWLER-NORDHEIM INJECTION, IEEE transactions on nuclear science, 40(6), 1993, pp. 1341-1349

REDUCTION OF CHARGE TRAPPING AND ELECTRON-TUNNELING IN SIMOX BY SUPPLEMENTAL IMPLANTATION OF OXYGEN

Authors: STAHLBUSH RE HUGHES HL KRULL WA

Citation: Re. Stahlbush et al., REDUCTION OF CHARGE TRAPPING AND ELECTRON-TUNNELING IN SIMOX BY SUPPLEMENTAL IMPLANTATION OF OXYGEN, IEEE transactions on nuclear science, 40(6), 1993, pp. 1740-1747

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