AAAAAA

   
Results: 1-8 |
Results: 8
THE STABILITY OF SI1-XGEX STRAINED LAYERS ON SMALL-AREA TRENCH-ISOLATED SILICON
Authors: SCHONENBERG K CHAN SW HARAME D GILBERT M STANIS C GIGNAC L
Citation: K. Schonenberg et al., THE STABILITY OF SI1-XGEX STRAINED LAYERS ON SMALL-AREA TRENCH-ISOLATED SILICON, Journal of materials research, 12(2), 1997, pp. 364-370
ELECTROMIGRATION DRIFT VELOCITY IN AL-ALLOY AND CU-ALLOY LINES
Authors: HU CK LEE KY LEE KL CABRAL C COLGAN EG STANIS C
Citation: Ck. Hu et al., ELECTROMIGRATION DRIFT VELOCITY IN AL-ALLOY AND CU-ALLOY LINES, Journal of the Electrochemical Society, 143(3), 1996, pp. 1001-1006
ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/
Authors: FEENSTRA RM LUTZ MA STERN F ISMAIL K MOONEY PM LEGOUES FK STANIS C CHU JO MEYERSON BS
Citation: Rm. Feenstra et al., ROUGHNESS ANALYSIS OF SI SIGE HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1608-1612
FABRICATION OF 3-TERMINAL RESONANT-TUNNELING DEVICES IN SILICON-BASEDMATERIAL
Authors: ZASLAVSKY A MILKOVE KR LEE YH CHAN KK STERN F GRUTZMACHER DA RISHTON SA STANIS C SEDGWICK TO
Citation: A. Zaslavsky et al., FABRICATION OF 3-TERMINAL RESONANT-TUNNELING DEVICES IN SILICON-BASEDMATERIAL, Applied physics letters, 64(13), 1994, pp. 1699-1701
ELECTRON-MICROSCOPY OF THE GRAIN-STRUCTURE OF METAL-FILMS AND LINES
Authors: SMITH DA SMALL M STANIS C
Citation: Da. Smith et al., ELECTRON-MICROSCOPY OF THE GRAIN-STRUCTURE OF METAL-FILMS AND LINES, Ultramicroscopy, 51(1-4), 1993, pp. 328-338
ELECTROMIGRATION IN 2-LEVEL BAMBOO GRAIN-STRUCTURE AL(CU) W INTERCONNECTIONS/
Authors: HU CK MAZZEO NJ STANIS C
Citation: Ck. Hu et al., ELECTROMIGRATION IN 2-LEVEL BAMBOO GRAIN-STRUCTURE AL(CU) W INTERCONNECTIONS/, Materials chemistry and physics, 35(1), 1993, pp. 95-98
DIFFUSION OF ELEMENTS IMPLANTED IN AMORPHOUS TITANIUM DISILICIDE
Authors: DHEURLE FM COTTE J GAS P GOLTZ G STANIS C THOMAS O
Citation: Fm. Dheurle et al., DIFFUSION OF ELEMENTS IMPLANTED IN AMORPHOUS TITANIUM DISILICIDE, Applied surface science, 73, 1993, pp. 167-174
IIA-3 113-GHZ F(T) GRADED-BASE SIGE HBTS
Authors: CRABBE E MEYERSON B HARAME D STORK J MEGDANIS A COTTE J CHU J GILBERT M STANIS C COMFORT J PATTON G SUBBANNA S
Citation: E. Crabbe et al., IIA-3 113-GHZ F(T) GRADED-BASE SIGE HBTS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2100-2101
Risultati: 1-8 |