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Results: 3
INVESTIGATION OF RADIATION DEFECTS IN N(-P-P(+) PLANAR SILICON NEUTRON DETECTORS())
Authors: STEFANOV KD SUEVA D GERMANOVA K HARDALOV CM
Citation: Kd. Stefanov et al., INVESTIGATION OF RADIATION DEFECTS IN N(-P-P(+) PLANAR SILICON NEUTRON DETECTORS()), Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 412(2-3), 1998, pp. 387-391
INVESTIGATION OF RADIATION-DAMAGE IN SILICON PRODUCED BY FAST-NEUTRONIRRADIATION WITH LIFETIME MEASUREMENTS AND DEEP-LEVEL TRANSIENT SPECTROSCOPY
Authors: STEFANOV KD HARDALOV CM SUEVA D
Citation: Kd. Stefanov et al., INVESTIGATION OF RADIATION-DAMAGE IN SILICON PRODUCED BY FAST-NEUTRONIRRADIATION WITH LIFETIME MEASUREMENTS AND DEEP-LEVEL TRANSIENT SPECTROSCOPY, Physica status solidi. a, Applied research, 163(1), 1997, pp. 27-32
ON THE APPLICABILITY OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR THE INVESTIGATION OF DEEP CENTERS IN SILICON CREATED BY FAST-NEUTRON IRRADIATION
Authors: HARDALOV CM STEFANOV KD SUEVA D
Citation: Cm. Hardalov et al., ON THE APPLICABILITY OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR THE INVESTIGATION OF DEEP CENTERS IN SILICON CREATED BY FAST-NEUTRON IRRADIATION, Applied physics A: Materials science & processing, 61(2), 1995, pp. 107-109
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