AAAAAA

   
Results: 1-11 |
Results: 11
MICROSTRUCTURE AND COMPOSITION OF INASN ALLOYS GROWN BY PLASMA-SOURCEMOLECULAR-BEAM EPITAXY
Authors: BERESFORD R STEVENS KS SCHWARTZMAN AF
Citation: R. Beresford et al., MICROSTRUCTURE AND COMPOSITION OF INASN ALLOYS GROWN BY PLASMA-SOURCEMOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1293-1296
FEASIBILITY OF THE SYNTHESIS OF ALASN AND GAASN FILMS BY PLASMA-SOURCE MOLECULAR-BEAM EPITAXY
Authors: MENDOZADIAZ G STEVENS KS SCHWARTZMAN AF BERESFORD R
Citation: G. Mendozadiaz et al., FEASIBILITY OF THE SYNTHESIS OF ALASN AND GAASN FILMS BY PLASMA-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 178(1-2), 1997, pp. 45-55
OPTICAL AND ELECTRICAL CHARACTERIZATION OF GAN LAYERS GROWN ON SILICON AND SAPPHIRE SUBSTRATES
Authors: SANCHEZGARCIA MA SANCHEZ FJ CALLE F MUNOZ E CALLEJA E STEVENS KS KINNIBURGH M BERESFORD R BEAUMONT B GIBART P
Citation: Ma. Sanchezgarcia et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF GAN LAYERS GROWN ON SILICON AND SAPPHIRE SUBSTRATES, Solid-state electronics, 40(1-8), 1996, pp. 81-84
INFLUENCE OF SUBSTRATE ELECTRICAL BIAS ON THE GROWTH OF GAN IN PLASMA-ASSISTED EPITAXY
Authors: BERESFORD R OHTANI A STEVENS KS KINNIBURGH M
Citation: R. Beresford et al., INFLUENCE OF SUBSTRATE ELECTRICAL BIAS ON THE GROWTH OF GAN IN PLASMA-ASSISTED EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 792-795
ANALYSIS AND OPTIMIZATION OF THE ELECTRON-CYCLOTRON-RESONANCE PLASMA FOR NITRIDE EPITAXY
Authors: OHTANI A STEVENS KS KINNIBURGH M BERESFORD R
Citation: A. Ohtani et al., ANALYSIS AND OPTIMIZATION OF THE ELECTRON-CYCLOTRON-RESONANCE PLASMA FOR NITRIDE EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 902-907
PHOTOCONDUCTIVE ULTRAVIOLET SENSOR USING MG-DOPED GAN ON SI(111)
Authors: STEVENS KS KINNIBURGH M BERESFORD R
Citation: Ks. Stevens et al., PHOTOCONDUCTIVE ULTRAVIOLET SENSOR USING MG-DOPED GAN ON SI(111), Applied physics letters, 66(25), 1995, pp. 3518-3520
DEMONSTRATION OF A SILICON FIELD-EFFECT TRANSISTOR USING AIN AS THE GATE DIELECTRIC
Authors: STEVENS KS KINNIBURGH M SCHWARTZMAN AF OHTANI A BERESFORD R
Citation: Ks. Stevens et al., DEMONSTRATION OF A SILICON FIELD-EFFECT TRANSISTOR USING AIN AS THE GATE DIELECTRIC, Applied physics letters, 66(23), 1995, pp. 3179-3181
GROWTH OF GROUP-III NITRIDES ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: STEVENS KS OHTANI A SCHWARTZMAN AF BERESFORD R
Citation: Ks. Stevens et al., GROWTH OF GROUP-III NITRIDES ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1186-1189
MICROSTRUCTURE OF ALN ON SI (111) GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: STEVENS KS OHTANI A KINNIBURGH M BERESFORD R
Citation: Ks. Stevens et al., MICROSTRUCTURE OF ALN ON SI (111) GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(3), 1994, pp. 321-323
MICROSTRUCTURE AND PHOTOLUMINESCENCE OF GAN GROWN ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: OHTANI A STEVENS KS BERESFORD R
Citation: A. Ohtani et al., MICROSTRUCTURE AND PHOTOLUMINESCENCE OF GAN GROWN ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(1), 1994, pp. 61-63
INTRINSIC STRESS IN HYDROGENATED AMORPHOUS-SILICON DEPOSITED WITH A REMOTE HYDROGEN PLASMA (VOL 71, PG 2628, 1992)
Authors: STEVENS KS JOHNSON NM
Citation: Ks. Stevens et Nm. Johnson, INTRINSIC STRESS IN HYDROGENATED AMORPHOUS-SILICON DEPOSITED WITH A REMOTE HYDROGEN PLASMA (VOL 71, PG 2628, 1992), Journal of applied physics, 73(9), 1993, pp. 4727-4727
Risultati: 1-11 |